Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

Takuma Nanjo, Naruhisa Miura, Toshiyuki Oishi, Muneyoshi Suita, Yuji Abe, Tatsuo Ozeki, Shigenori Nakatsuka, Akira Indue, Takahide Ishikawa, Yoshio Matsuda, Hiroyasu Ishikawa, Takashi Egawa

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