Improvement of multilayer graphene quality by current stress during thermal CVD

Liyana Abdul Razak, Daiki Tobino, Kazuyoshi Ueno

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

To improve crystallinity and surface morphology of multilayer graphene (MLG) films for interconnect applications, a new CVD method which introduces current stress during thermal CVD have been investigated using cobalt (Co) as the catalyst. MLG crystallinity, which is indicated by intensity ratio of G and D peaks in Raman spectra (IG/ID ratio), increased as the current was increased, and the maximum IG/ID ratios of 44 and 30 were obtained at the furnace temperature of 500 and 400 °C, respectively. Comparing with thermal CVD without direct current at the same sample temperature after taking the rising sample temperature into account due to Joule heating, higher IG/ID ratio was still led by the current enhanced CVD (CECVD) with lesser agglomeration. Besides Joule heating that may have influence in enhancing MLG growth, we assume other effects of direct current may have additional influence through grain growth of Co catalytic layer. We believe additional current in thermal CVD will lead to better control of MLG growth for interconnect applications.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalMicroelectronic Engineering
Volume120
DOIs
Publication statusPublished - 2014 May 25

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Graphite
thermal stresses
Thermal stress
Graphene
graphene
Multilayers
Joule heating
Cobalt
crystallinity
cobalt
direct current
agglomeration
Grain growth
Temperature
Surface morphology
furnaces
temperature
Raman scattering
Furnaces
Agglomeration

Keywords

  • Agglomeration
  • Cobalt
  • CVD
  • Direct current
  • Graphene
  • Joule heating

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Improvement of multilayer graphene quality by current stress during thermal CVD. / Razak, Liyana Abdul; Tobino, Daiki; Ueno, Kazuyoshi.

In: Microelectronic Engineering, Vol. 120, 25.05.2014, p. 200-204.

Research output: Contribution to journalArticle

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