Improvement of polymer type EB resist sensitivity and line edge roughness

Makoto Otani, Hironori Asada, Hosei Tsunoda, Masashi Kunitake, Takehiko Ishizaki, Ryuji Miyagawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

In order to improve sensitivity and line edge roughness (LER) for electron beam (EB) lithography, the positive-type polymer resists with various molecular weights and controlled dispersion were newly synthesized and examined. The synthesized resists have the same composition as ZEP520A (Nippon Zeon). With the low molecular and the narrow dispersion resist, improvements of both the sensitivity and LER are confirmed by obtaining the SEM images of line and space resist patterns exposed by EB writing system at an acceleration voltage of 100 kV. The polymer resist with molecular weight (Mw: 30k) and dispersion (1.4) exhibited 22 nm hp resolution, 20% improved LER and 15 % improved sensitivity compared with original ZEP520A.

Original languageEnglish
Title of host publicationPhotomask and Next-Generation Lithography Mask Technology XVIII
DOIs
Publication statusPublished - 2011 Jul 25
EventPhotomask and Next-Generation Lithography Mask Technology XVIII - Yokohama, Japan
Duration: 2011 Apr 132011 Apr 15

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8081
ISSN (Print)0277-786X

Conference

ConferencePhotomask and Next-Generation Lithography Mask Technology XVIII
CountryJapan
CityYokohama
Period11/4/1311/4/15

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Keywords

  • Dispersion
  • Electron beam lithography
  • Line edge roughness (LER)
  • Molecular weight
  • Polymer resist
  • Positive type resist
  • Resolution
  • Sensitivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Otani, M., Asada, H., Tsunoda, H., Kunitake, M., Ishizaki, T., & Miyagawa, R. (2011). Improvement of polymer type EB resist sensitivity and line edge roughness. In Photomask and Next-Generation Lithography Mask Technology XVIII [808107] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8081). https://doi.org/10.1117/12.897792