Improvement of simultaneous switching noise simulation considering on-chip capacitance

Kunio Ota, Kazuhisa Matsuge, Yo Takahashi, Toshio Sudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Simultaneous switching noise (SSN) causes signal degradation to the high-speed interfaces among CMOS VLSIs. To achieve SSN simulation with a high accuracy, accurate models for chips, packages and printed circuit boards (PCBs) are required. However, such accurate simulation models are not currently available, since chip vendors do not release the value of on-chip capacitance and the detailed package model with mutual inductances. This paper presents our approach for establishing an accurate model without detailed information on the chip and package. The three key points of our approach are the measurement of on-chip capacitance using a vector network analyzer (VNA), the measurement of quad flat package (QFP) dimensions using X-ray photographs, and the application of 3-D electromagnetic field solver to extract a detailed equivalent circuit model for the package from a geometrical structure. The simulated SSN time-domain waveforms showed an extremely good agreement with the measured results.

Original languageEnglish
Title of host publicationIEEE International Symposium on Electromagnetic Compatibility, EMC 2010 - Final Program
Pages284-288
Number of pages5
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Symposium on Electromagnetic Compatibility, EMC 2010 - Fort Lauderdale, FL, United States
Duration: 2010 Jul 252010 Jul 30

Publication series

NameIEEE International Symposium on Electromagnetic Compatibility
ISSN (Print)1077-4076

Conference

Conference2010 IEEE International Symposium on Electromagnetic Compatibility, EMC 2010
Country/TerritoryUnited States
CityFort Lauderdale, FL
Period10/7/2510/7/30

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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