Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

Kattareeya Taweesup, Ippei Yamamoto, Toyohiro Chikyow, Gobboon Lothongkum, Kazutoshi Tsukagoshi, Tomoji Ohishi, Sukkaneste Tungasmita, Patama Visuttipitukul, Kazuhiro Ito, Makoto Takahashi, Toshihide Nabatame

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Rutheniumdoped indiumoxide (In1-xRuxOy) films fabricated using DC magnetron co-sputteringwith In2O3 and Ru targets were investigated for use as transparent conductive oxides. The In1-xRuxOy films had an amorphous structure in the wide compositional range of x = 0.3-0.8 and had an extremely smooth surface. The transmittance and resistivity of the In1-xRuxOy films increased as the Ru content increased. The transmittance of the In0.38Ru0.62Oy film improved to over 80%when the film thicknesswas less than 5 nm,while the specific resistivity (ρ) was kept to a low value of 1.6 × 10-4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In0.9Sn0.1Oy, ITO) (150 nm)/ultrathin In0.38Ru0.62Oy (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10-5 Ω cm. This ITO/In0.38Ru0.62Oy bilayer is a candidate for use as an anode for organic electroluminescent devices.

Original languageEnglish
Pages (from-to)126-130
Number of pages5
JournalThin Solid Films
Volume598
DOIs
Publication statusPublished - 2016 Jan 1

Fingerprint

Ruthenium
Tin oxides
indium oxides
Indium
Oxides
tin oxides
ruthenium
transmittance
oxides
ITO (semiconductors)
Luminescent devices
electrical resistivity
Anodes
anodes
direct current
indium oxide
indium tin oxide

Keywords

  • Bilayers
  • Doped indium oxide
  • Effective work function
  • Indium tin oxide
  • Ruthenium
  • Transparent conductive oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide. / Taweesup, Kattareeya; Yamamoto, Ippei; Chikyow, Toyohiro; Lothongkum, Gobboon; Tsukagoshi, Kazutoshi; Ohishi, Tomoji; Tungasmita, Sukkaneste; Visuttipitukul, Patama; Ito, Kazuhiro; Takahashi, Makoto; Nabatame, Toshihide.

In: Thin Solid Films, Vol. 598, 01.01.2016, p. 126-130.

Research output: Contribution to journalArticle

Taweesup, K, Yamamoto, I, Chikyow, T, Lothongkum, G, Tsukagoshi, K, Ohishi, T, Tungasmita, S, Visuttipitukul, P, Ito, K, Takahashi, M & Nabatame, T 2016, 'Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide', Thin Solid Films, vol. 598, pp. 126-130. https://doi.org/10.1016/j.tsf.2015.11.070
Taweesup, Kattareeya ; Yamamoto, Ippei ; Chikyow, Toyohiro ; Lothongkum, Gobboon ; Tsukagoshi, Kazutoshi ; Ohishi, Tomoji ; Tungasmita, Sukkaneste ; Visuttipitukul, Patama ; Ito, Kazuhiro ; Takahashi, Makoto ; Nabatame, Toshihide. / Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide. In: Thin Solid Films. 2016 ; Vol. 598. pp. 126-130.
@article{11e4d651cbe248faac8c6a12f6b030e4,
title = "Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide",
abstract = "Rutheniumdoped indiumoxide (In1-xRuxOy) films fabricated using DC magnetron co-sputteringwith In2O3 and Ru targets were investigated for use as transparent conductive oxides. The In1-xRuxOy films had an amorphous structure in the wide compositional range of x = 0.3-0.8 and had an extremely smooth surface. The transmittance and resistivity of the In1-xRuxOy films increased as the Ru content increased. The transmittance of the In0.38Ru0.62Oy film improved to over 80{\%}when the film thicknesswas less than 5 nm,while the specific resistivity (ρ) was kept to a low value of 1.6 × 10-4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In0.9Sn0.1Oy, ITO) (150 nm)/ultrathin In0.38Ru0.62Oy (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86{\%}, and low ρ of 9.2 × 10-5 Ω cm. This ITO/In0.38Ru0.62Oy bilayer is a candidate for use as an anode for organic electroluminescent devices.",
keywords = "Bilayers, Doped indium oxide, Effective work function, Indium tin oxide, Ruthenium, Transparent conductive oxide",
author = "Kattareeya Taweesup and Ippei Yamamoto and Toyohiro Chikyow and Gobboon Lothongkum and Kazutoshi Tsukagoshi and Tomoji Ohishi and Sukkaneste Tungasmita and Patama Visuttipitukul and Kazuhiro Ito and Makoto Takahashi and Toshihide Nabatame",
year = "2016",
month = "1",
day = "1",
doi = "10.1016/j.tsf.2015.11.070",
language = "English",
volume = "598",
pages = "126--130",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

AU - Taweesup, Kattareeya

AU - Yamamoto, Ippei

AU - Chikyow, Toyohiro

AU - Lothongkum, Gobboon

AU - Tsukagoshi, Kazutoshi

AU - Ohishi, Tomoji

AU - Tungasmita, Sukkaneste

AU - Visuttipitukul, Patama

AU - Ito, Kazuhiro

AU - Takahashi, Makoto

AU - Nabatame, Toshihide

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Rutheniumdoped indiumoxide (In1-xRuxOy) films fabricated using DC magnetron co-sputteringwith In2O3 and Ru targets were investigated for use as transparent conductive oxides. The In1-xRuxOy films had an amorphous structure in the wide compositional range of x = 0.3-0.8 and had an extremely smooth surface. The transmittance and resistivity of the In1-xRuxOy films increased as the Ru content increased. The transmittance of the In0.38Ru0.62Oy film improved to over 80%when the film thicknesswas less than 5 nm,while the specific resistivity (ρ) was kept to a low value of 1.6 × 10-4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In0.9Sn0.1Oy, ITO) (150 nm)/ultrathin In0.38Ru0.62Oy (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10-5 Ω cm. This ITO/In0.38Ru0.62Oy bilayer is a candidate for use as an anode for organic electroluminescent devices.

AB - Rutheniumdoped indiumoxide (In1-xRuxOy) films fabricated using DC magnetron co-sputteringwith In2O3 and Ru targets were investigated for use as transparent conductive oxides. The In1-xRuxOy films had an amorphous structure in the wide compositional range of x = 0.3-0.8 and had an extremely smooth surface. The transmittance and resistivity of the In1-xRuxOy films increased as the Ru content increased. The transmittance of the In0.38Ru0.62Oy film improved to over 80%when the film thicknesswas less than 5 nm,while the specific resistivity (ρ) was kept to a low value of 1.6 × 10-4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In0.9Sn0.1Oy, ITO) (150 nm)/ultrathin In0.38Ru0.62Oy (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10-5 Ω cm. This ITO/In0.38Ru0.62Oy bilayer is a candidate for use as an anode for organic electroluminescent devices.

KW - Bilayers

KW - Doped indium oxide

KW - Effective work function

KW - Indium tin oxide

KW - Ruthenium

KW - Transparent conductive oxide

UR - http://www.scopus.com/inward/record.url?scp=84959079490&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84959079490&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2015.11.070

DO - 10.1016/j.tsf.2015.11.070

M3 - Article

VL - 598

SP - 126

EP - 130

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -