Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

Kattareeya Taweesup, Ippei Yamamoto, Toyohiro Chikyow, Gobboon Lothongkum, Kazutoshi Tsukagoshi, Tomoji Ohishi, Sukkaneste Tungasmita, Patama Visuttipitukul, Kazuhiro Ito, Makoto Takahashi, Toshihide Nabatame

Research output: Contribution to journalArticle

1 Citation (Scopus)


Rutheniumdoped indiumoxide (In1-xRuxOy) films fabricated using DC magnetron co-sputteringwith In2O3 and Ru targets were investigated for use as transparent conductive oxides. The In1-xRuxOy films had an amorphous structure in the wide compositional range of x = 0.3-0.8 and had an extremely smooth surface. The transmittance and resistivity of the In1-xRuxOy films increased as the Ru content increased. The transmittance of the In0.38Ru0.62Oy film improved to over 80%when the film thicknesswas less than 5 nm,while the specific resistivity (ρ) was kept to a low value of 1.6 × 10-4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In0.9Sn0.1Oy, ITO) (150 nm)/ultrathin In0.38Ru0.62Oy (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10-5 Ω cm. This ITO/In0.38Ru0.62Oy bilayer is a candidate for use as an anode for organic electroluminescent devices.

Original languageEnglish
Pages (from-to)126-130
Number of pages5
JournalThin Solid Films
Publication statusPublished - 2016 Jan 1



  • Bilayers
  • Doped indium oxide
  • Effective work function
  • Indium tin oxide
  • Ruthenium
  • Transparent conductive oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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