In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) Surfaces

H. Irie, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)724-725
JournalExtended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2004 Sep 1

Cite this

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title = "In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) Surfaces",
author = "H. Irie and K. Kita and K. Kyuno and A. Toriumi",
year = "2004",
month = "9",
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language = "English",
pages = "724--725",
journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

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T1 - In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) Surfaces

AU - Irie, H.

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/9/1

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M3 - Article

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EP - 725

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

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