In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) Surfaces

H. Irie, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)724-725
JournalExtended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2004 Sep 1

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