In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si

H. Irie, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalConference article


An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.

Original languageEnglish
Pages (from-to)225-228
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2004 Dec 1
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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