In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si

H. Irie, K. Kita, Kentaro Kyuno, A. Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

126 Citations (Scopus)

Abstract

An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages225-228
Number of pages4
Publication statusPublished - 2004
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

Other

OtherIEEE International Electron Devices Meeting, 2004 IEDM
CountryUnited States
CitySan Francisco, CA
Period04/12/1304/12/15

Fingerprint

Inversion layers
Anisotropy
Hole mobility
Electron mobility

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Irie, H., Kita, K., Kyuno, K., & Toriumi, A. (2004). In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 225-228)

In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si. / Irie, H.; Kita, K.; Kyuno, Kentaro; Toriumi, A.

Technical Digest - International Electron Devices Meeting, IEDM. 2004. p. 225-228.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Irie, H, Kita, K, Kyuno, K & Toriumi, A 2004, In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si. in Technical Digest - International Electron Devices Meeting, IEDM. pp. 225-228, IEEE International Electron Devices Meeting, 2004 IEDM, San Francisco, CA, United States, 04/12/13.
Irie H, Kita K, Kyuno K, Toriumi A. In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si. In Technical Digest - International Electron Devices Meeting, IEDM. 2004. p. 225-228
Irie, H. ; Kita, K. ; Kyuno, Kentaro ; Toriumi, A. / In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si. Technical Digest - International Electron Devices Meeting, IEDM. 2004. pp. 225-228
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