In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in N-and P-MOS Inversion Layers on (100), (110), and (111) Si

H.Irie H.Irie, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

127 Citations (Scopus)
Original languageEnglish
JournalIEEE International Electron Dvice Meeting (IEDM)
Publication statusPublished - 2004 Dec 1

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