In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in N-and P-MOS Inversion Layers on (100), (110), and (111) Si

H.Irie H.Irie, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

126 Citations (Scopus)
Original languageEnglish
JournalIEEE International Electron Dvice Meeting (IEDM)
Publication statusPublished - 2004 Dec 1

Cite this

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title = "In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in N-and P-MOS Inversion Layers on (100), (110), and (111) Si",
author = "H.Irie H.Irie and K. Kita and K. Kyuno and A. Toriumi",
year = "2004",
month = "12",
day = "1",
language = "English",
journal = "IEEE International Electron Dvice Meeting (IEDM)",

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TY - JOUR

T1 - In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in N-and P-MOS Inversion Layers on (100), (110), and (111) Si

AU - H.Irie, H.Irie

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/12/1

Y1 - 2004/12/1

M3 - Article

JO - IEEE International Electron Dvice Meeting (IEDM)

JF - IEEE International Electron Dvice Meeting (IEDM)

ER -