Increase in breakdown voltage of AlGaN/GaN HEMTs with a high-k dielectric layer

Hideyuki Hanawa, Kazushige Horio

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

A two-dimensional analysis of breakdown characteristics in AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of an off-state breakdown voltage on the relative permittivity of the passivation layer εr is studied. It is shown that as εr increases, the off-state breakdown voltage increases. This is because the electric field at the drain edge of the gate is weakened as εr increases. This occurs because in the insulator the applied voltage tends to drop uniformly in general, and hence when the insulator is attached to the semiconductor, the voltage drop along the semiconductor becomes smoother at the drain edge of the gate if εr of the insulator is higher and the effect of the insulator becomes more significant. It is concluded that AlGaN/GaN HEMTs with a high-k passivation layer should have high breakdown voltages.

Original languageEnglish
Pages (from-to)784-787
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume211
Issue number4
DOIs
Publication statusPublished - 2014 Apr

Keywords

  • AlGaN/GaN HEMT
  • breakdown voltage
  • high-k passivation layer
  • two-dimensional analysis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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