Increase in breakdown voltage of AlGaN/GaN HEMTs with a high-k dielectric layer

Engineering & Materials Science

• High-k dielectric 100%
• High electron mobility transistors 73%
• Electric breakdown 71%
• Passivation 51%
• Semiconductor materials 37%
• Buffer layers 30%
• Electric potential 21%
• Permittivity 21%
• Electric fields 19%

Chemical Compounds

• Breakdown Voltage 94%
• Nonconductor 71%
• Dielectric Material 56%
• Chemical Passivation 32%
• Deep Donor 28%
• Drop 27%
• Semiconductor 24%
• Voltage 23%
• Dielectric Constant 14%
• Electric Field 14%
• Buffer Solution 10%

Physics & Astronomy

• high electron mobility transistors 65%
• electrical faults 62%
• insulators 46%
• passivity 29%
• dimensional analysis 18%
• electric potential 17%
• buffers 13%
• breakdown 12%
• permittivity 11%
• electric fields 9%