Influence of growth temperature on quaternary AlInGaN epilayers for ultraviolet emission grown by metalorganic chemical vapor deposition

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Baijun Zhang, Maosheng Hao

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A set of AlInGaN epilayers with the same alloy compositions (Al ∼ 9%, In ∼ 2%) were grown at temperatures widely ranging from 780 to 940°C by metalorganic chemical vapor deposition (MOCVD) for ultraviolet (UV) application. A clear growth mode transition from three-dimensional to two-dimensional growth with the increased temperature was observed for the first time by means of atomic force microscopy (AFM). In comparison with the low-temperature (LT) grown AlInGaN, the high-temperature (HT) grown one exhibited high crystalline quality, which was also verified by the results of X-ray diffraction (XRD) and photoluminescence (PL). Therefore, the high-temperature growth of AlInGaN is strongly recommended, particularly for UV application. Further investigation was performed on these samples by using temperature dependent PL measurements, which indicated that the poor crystalline quality of LT-grown AlInGaN was due to the improper incorporation of Al and the facile formation of nonradiative recombination centers at low growth temperatures.

Original languageEnglish
Pages (from-to)2414-2418
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number5 A
Publication statusPublished - 2004 May
Externally publishedYes

Fingerprint

Epilayers
ultraviolet emission
Metallorganic chemical vapor deposition
Growth temperature
metalorganic chemical vapor deposition
photoluminescence
Temperature
temperature
Photoluminescence
Crystalline materials
atomic force microscopy
Atomic force microscopy
diffraction
X ray diffraction
x rays
Chemical analysis

Keywords

  • AlInGaN
  • III-V semiconductor
  • Localization effect
  • MOCVD
  • Quaternary
  • Temperature dependence of photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{b9726f02878f40bfa36b3971c92c733e,
title = "Influence of growth temperature on quaternary AlInGaN epilayers for ultraviolet emission grown by metalorganic chemical vapor deposition",
abstract = "A set of AlInGaN epilayers with the same alloy compositions (Al ∼ 9{\%}, In ∼ 2{\%}) were grown at temperatures widely ranging from 780 to 940°C by metalorganic chemical vapor deposition (MOCVD) for ultraviolet (UV) application. A clear growth mode transition from three-dimensional to two-dimensional growth with the increased temperature was observed for the first time by means of atomic force microscopy (AFM). In comparison with the low-temperature (LT) grown AlInGaN, the high-temperature (HT) grown one exhibited high crystalline quality, which was also verified by the results of X-ray diffraction (XRD) and photoluminescence (PL). Therefore, the high-temperature growth of AlInGaN is strongly recommended, particularly for UV application. Further investigation was performed on these samples by using temperature dependent PL measurements, which indicated that the poor crystalline quality of LT-grown AlInGaN was due to the improper incorporation of Al and the facile formation of nonradiative recombination centers at low growth temperatures.",
keywords = "AlInGaN, III-V semiconductor, Localization effect, MOCVD, Quaternary, Temperature dependence of photoluminescence",
author = "Yang Liu and Takashi Egawa and Hiroyasu Ishikawa and Baijun Zhang and Maosheng Hao",
year = "2004",
month = "5",
language = "English",
volume = "43",
pages = "2414--2418",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 A",

}

TY - JOUR

T1 - Influence of growth temperature on quaternary AlInGaN epilayers for ultraviolet emission grown by metalorganic chemical vapor deposition

AU - Liu, Yang

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Zhang, Baijun

AU - Hao, Maosheng

PY - 2004/5

Y1 - 2004/5

N2 - A set of AlInGaN epilayers with the same alloy compositions (Al ∼ 9%, In ∼ 2%) were grown at temperatures widely ranging from 780 to 940°C by metalorganic chemical vapor deposition (MOCVD) for ultraviolet (UV) application. A clear growth mode transition from three-dimensional to two-dimensional growth with the increased temperature was observed for the first time by means of atomic force microscopy (AFM). In comparison with the low-temperature (LT) grown AlInGaN, the high-temperature (HT) grown one exhibited high crystalline quality, which was also verified by the results of X-ray diffraction (XRD) and photoluminescence (PL). Therefore, the high-temperature growth of AlInGaN is strongly recommended, particularly for UV application. Further investigation was performed on these samples by using temperature dependent PL measurements, which indicated that the poor crystalline quality of LT-grown AlInGaN was due to the improper incorporation of Al and the facile formation of nonradiative recombination centers at low growth temperatures.

AB - A set of AlInGaN epilayers with the same alloy compositions (Al ∼ 9%, In ∼ 2%) were grown at temperatures widely ranging from 780 to 940°C by metalorganic chemical vapor deposition (MOCVD) for ultraviolet (UV) application. A clear growth mode transition from three-dimensional to two-dimensional growth with the increased temperature was observed for the first time by means of atomic force microscopy (AFM). In comparison with the low-temperature (LT) grown AlInGaN, the high-temperature (HT) grown one exhibited high crystalline quality, which was also verified by the results of X-ray diffraction (XRD) and photoluminescence (PL). Therefore, the high-temperature growth of AlInGaN is strongly recommended, particularly for UV application. Further investigation was performed on these samples by using temperature dependent PL measurements, which indicated that the poor crystalline quality of LT-grown AlInGaN was due to the improper incorporation of Al and the facile formation of nonradiative recombination centers at low growth temperatures.

KW - AlInGaN

KW - III-V semiconductor

KW - Localization effect

KW - MOCVD

KW - Quaternary

KW - Temperature dependence of photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=3142768440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142768440&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3142768440

VL - 43

SP - 2414

EP - 2418

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 A

ER -