Abstract
A set of AlInGaN epilayers with the same alloy compositions (Al ∼ 9%, In ∼ 2%) were grown at temperatures widely ranging from 780 to 940°C by metalorganic chemical vapor deposition (MOCVD) for ultraviolet (UV) application. A clear growth mode transition from three-dimensional to two-dimensional growth with the increased temperature was observed for the first time by means of atomic force microscopy (AFM). In comparison with the low-temperature (LT) grown AlInGaN, the high-temperature (HT) grown one exhibited high crystalline quality, which was also verified by the results of X-ray diffraction (XRD) and photoluminescence (PL). Therefore, the high-temperature growth of AlInGaN is strongly recommended, particularly for UV application. Further investigation was performed on these samples by using temperature dependent PL measurements, which indicated that the poor crystalline quality of LT-grown AlInGaN was due to the improper incorporation of Al and the facile formation of nonradiative recombination centers at low growth temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 2414-2418 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 5 A |
| Publication status | Published - 2004 May |
| Externally published | Yes |
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Keywords
- AlInGaN
- III-V semiconductor
- Localization effect
- MOCVD
- Quaternary
- Temperature dependence of photoluminescence
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Influence of growth temperature on quaternary AlInGaN epilayers for ultraviolet emission grown by metalorganic chemical vapor deposition. / Liu, Yang; Egawa, Takashi; Ishikawa, Hiroyasu; Zhang, Baijun; Hao, Maosheng.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 5 A, 05.2004, p. 2414-2418.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of growth temperature on quaternary AlInGaN epilayers for ultraviolet emission grown by metalorganic chemical vapor deposition
AU - Liu, Yang
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
AU - Zhang, Baijun
AU - Hao, Maosheng
PY - 2004/5
Y1 - 2004/5
N2 - A set of AlInGaN epilayers with the same alloy compositions (Al ∼ 9%, In ∼ 2%) were grown at temperatures widely ranging from 780 to 940°C by metalorganic chemical vapor deposition (MOCVD) for ultraviolet (UV) application. A clear growth mode transition from three-dimensional to two-dimensional growth with the increased temperature was observed for the first time by means of atomic force microscopy (AFM). In comparison with the low-temperature (LT) grown AlInGaN, the high-temperature (HT) grown one exhibited high crystalline quality, which was also verified by the results of X-ray diffraction (XRD) and photoluminescence (PL). Therefore, the high-temperature growth of AlInGaN is strongly recommended, particularly for UV application. Further investigation was performed on these samples by using temperature dependent PL measurements, which indicated that the poor crystalline quality of LT-grown AlInGaN was due to the improper incorporation of Al and the facile formation of nonradiative recombination centers at low growth temperatures.
AB - A set of AlInGaN epilayers with the same alloy compositions (Al ∼ 9%, In ∼ 2%) were grown at temperatures widely ranging from 780 to 940°C by metalorganic chemical vapor deposition (MOCVD) for ultraviolet (UV) application. A clear growth mode transition from three-dimensional to two-dimensional growth with the increased temperature was observed for the first time by means of atomic force microscopy (AFM). In comparison with the low-temperature (LT) grown AlInGaN, the high-temperature (HT) grown one exhibited high crystalline quality, which was also verified by the results of X-ray diffraction (XRD) and photoluminescence (PL). Therefore, the high-temperature growth of AlInGaN is strongly recommended, particularly for UV application. Further investigation was performed on these samples by using temperature dependent PL measurements, which indicated that the poor crystalline quality of LT-grown AlInGaN was due to the improper incorporation of Al and the facile formation of nonradiative recombination centers at low growth temperatures.
KW - AlInGaN
KW - III-V semiconductor
KW - Localization effect
KW - MOCVD
KW - Quaternary
KW - Temperature dependence of photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=3142768440&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3142768440&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:3142768440
VL - 43
SP - 2414
EP - 2418
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 A
ER -