Influence of morphological transition on crystallization process in Si

Kazuki Watanabe, Katsuhisa Nagayama, Kazuhiko Kuribayashi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Using CO2 laser equipped electro-magnetic levitator, we carried out the crystallization of Si at undercoolings from 0 K to 200 K. From the point of the interface morphologies, the relationship between growth velocities and undercoolings was classified into two regions, I and II, respectively. In region I where the undercooling is approximately less than 100 K, thin plate crystals whose interface consists of faceted plane were observed. In region II, the morphology of growing crystals changed to massive dendrites. Although the interface morphologies in region II look quite different from that in region I, the growth velocities are expressed by two dimensional (2D) nucleation- controlled growth model, and at undercoolings larger than 150 K, the growth velocities asymptotically close to the analysis of the mono-parametric linear kinetics growth model. In this stage, the kinetic coefficient of 0.1 m/sK is equivalent with that derived by the diffusion-controlled growth model. This result means that with increase of undercooling, the rate-determining factor changes from 2D nucleation on the faceted interface to random incorporation of atoms on the rough interface.

Original languageEnglish
Pages (from-to)188-192
Number of pages5
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume75
Issue number3
DOIs
Publication statusPublished - 2011 Mar

Fingerprint

Undercooling
Crystallization
supercooling
crystallization
Nucleation
nucleation
Growth kinetics
Crystal growth
thin plates
kinetics
dendrites
crystals
Atoms
Crystals
Lasers
coefficients
lasers
atoms

Keywords

  • Containerless processing
  • Crystal growth
  • Silicon
  • Undercooling

ASJC Scopus subject areas

  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Condensed Matter Physics

Cite this

Influence of morphological transition on crystallization process in Si. / Watanabe, Kazuki; Nagayama, Katsuhisa; Kuribayashi, Kazuhiko.

In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, Vol. 75, No. 3, 03.2011, p. 188-192.

Research output: Contribution to journalArticle

@article{188d2562d4834a22a8b03d5742f612d5,
title = "Influence of morphological transition on crystallization process in Si",
abstract = "Using CO2 laser equipped electro-magnetic levitator, we carried out the crystallization of Si at undercoolings from 0 K to 200 K. From the point of the interface morphologies, the relationship between growth velocities and undercoolings was classified into two regions, I and II, respectively. In region I where the undercooling is approximately less than 100 K, thin plate crystals whose interface consists of faceted plane were observed. In region II, the morphology of growing crystals changed to massive dendrites. Although the interface morphologies in region II look quite different from that in region I, the growth velocities are expressed by two dimensional (2D) nucleation- controlled growth model, and at undercoolings larger than 150 K, the growth velocities asymptotically close to the analysis of the mono-parametric linear kinetics growth model. In this stage, the kinetic coefficient of 0.1 m/sK is equivalent with that derived by the diffusion-controlled growth model. This result means that with increase of undercooling, the rate-determining factor changes from 2D nucleation on the faceted interface to random incorporation of atoms on the rough interface.",
keywords = "Containerless processing, Crystal growth, Silicon, Undercooling",
author = "Kazuki Watanabe and Katsuhisa Nagayama and Kazuhiko Kuribayashi",
year = "2011",
month = "3",
doi = "10.2320/jinstmet.75.188",
language = "English",
volume = "75",
pages = "188--192",
journal = "Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals",
issn = "0021-4876",
publisher = "Japan Institute of Metals (JIM)",
number = "3",

}

TY - JOUR

T1 - Influence of morphological transition on crystallization process in Si

AU - Watanabe, Kazuki

AU - Nagayama, Katsuhisa

AU - Kuribayashi, Kazuhiko

PY - 2011/3

Y1 - 2011/3

N2 - Using CO2 laser equipped electro-magnetic levitator, we carried out the crystallization of Si at undercoolings from 0 K to 200 K. From the point of the interface morphologies, the relationship between growth velocities and undercoolings was classified into two regions, I and II, respectively. In region I where the undercooling is approximately less than 100 K, thin plate crystals whose interface consists of faceted plane were observed. In region II, the morphology of growing crystals changed to massive dendrites. Although the interface morphologies in region II look quite different from that in region I, the growth velocities are expressed by two dimensional (2D) nucleation- controlled growth model, and at undercoolings larger than 150 K, the growth velocities asymptotically close to the analysis of the mono-parametric linear kinetics growth model. In this stage, the kinetic coefficient of 0.1 m/sK is equivalent with that derived by the diffusion-controlled growth model. This result means that with increase of undercooling, the rate-determining factor changes from 2D nucleation on the faceted interface to random incorporation of atoms on the rough interface.

AB - Using CO2 laser equipped electro-magnetic levitator, we carried out the crystallization of Si at undercoolings from 0 K to 200 K. From the point of the interface morphologies, the relationship between growth velocities and undercoolings was classified into two regions, I and II, respectively. In region I where the undercooling is approximately less than 100 K, thin plate crystals whose interface consists of faceted plane were observed. In region II, the morphology of growing crystals changed to massive dendrites. Although the interface morphologies in region II look quite different from that in region I, the growth velocities are expressed by two dimensional (2D) nucleation- controlled growth model, and at undercoolings larger than 150 K, the growth velocities asymptotically close to the analysis of the mono-parametric linear kinetics growth model. In this stage, the kinetic coefficient of 0.1 m/sK is equivalent with that derived by the diffusion-controlled growth model. This result means that with increase of undercooling, the rate-determining factor changes from 2D nucleation on the faceted interface to random incorporation of atoms on the rough interface.

KW - Containerless processing

KW - Crystal growth

KW - Silicon

KW - Undercooling

UR - http://www.scopus.com/inward/record.url?scp=79955757553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955757553&partnerID=8YFLogxK

U2 - 10.2320/jinstmet.75.188

DO - 10.2320/jinstmet.75.188

M3 - Article

AN - SCOPUS:79955757553

VL - 75

SP - 188

EP - 192

JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

SN - 0021-4876

IS - 3

ER -