Influence of morphological transition on crystallization process in Si

Kazuki Watanabe, Katsuhisa Nagayama, Kazuhiko Kuribayashi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Using CO2 laser equipped electro-magnetic levitator, we carried out the crystallization of Si at undercoolings from 0 K to 200 K. From the point of the interface morphologies, the relationship between growth velocities and undercoolings was classified into two regions, I and II, respectively. In region I where the undercooling is approximately less than 100 K, thin plate crystals whose interface consists of faceted plane were observed. In region II, the morphology of growing crystals changed to massive dendrites. Although the interface morphologies in region II look quite different from that in region I, the growth velocities are expressed by two dimensional (2D) nucleation- controlled growth model, and at undercoolings larger than 150 K, the growth velocities asymptotically close to the analysis of the mono-parametric linear kinetics growth model. In this stage, the kinetic coefficient of 0.1 m/sK is equivalent with that derived by the diffusion-controlled growth model. This result means that with increase of undercooling, the rate-determining factor changes from 2D nucleation on the faceted interface to random incorporation of atoms on the rough interface.

Original languageEnglish
Pages (from-to)188-192
Number of pages5
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume75
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

Keywords

  • Containerless processing
  • Crystal growth
  • Silicon
  • Undercooling

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

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