Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

T.Nabatame T.Nabatame, M.Kimura M.Kimura, H.Yamada A.Ohi, T.Ohishi T.Ohishi, T.Chikyow T.Chikyow, Tomoji Oishi

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
Publication status	Published - 2011 May 25

Cite this

Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift. / T.Nabatame, T.Nabatame; M.Kimura, M.Kimura; A.Ohi, H.Yamada; T.Ohishi, T.Ohishi; T.Chikyow, T.Chikyow; Oishi, Tomoji.

Research output: Contribution to journal › Article › peer-review

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AU - T.Nabatame, T.Nabatame

AU - M.Kimura, M.Kimura

AU - A.Ohi, H.Yamada

AU - T.Ohishi, T.Ohishi

AU - T.Chikyow, T.Chikyow

AU - Oishi, Tomoji

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JF - 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

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