Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

T.Nabatame T.Nabatame, M.Kimura M.Kimura, H.Yamada A.Ohi, T.Ohishi T.Ohishi, T.Chikyow T.Chikyow, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
Journal6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
Publication statusPublished - 2011 May 25

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