Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

T.Nabatame T.Nabatame, M.Kimura M.Kimura, H.Yamada A.Ohi, T.Ohishi T.Ohishi, T.Chikyow T.Chikyow, Tomoji Oishi

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
Publication status	Published - 2011 May 25

Cite this

@article{76ad17cffbdd40169d14aca1885b96f8,

title = "Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift",

author = "T.Nabatame T.Nabatame and M.Kimura M.Kimura and H.Yamada A.Ohi and T.Ohishi T.Ohishi and T.Chikyow T.Chikyow and Tomoji Oishi",

year = "2011",

month = may,

day = "25",

language = "English",

journal = "6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)",

}

TY - JOUR

T1 - Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

AU - T.Nabatame, T.Nabatame

AU - M.Kimura, M.Kimura

AU - A.Ohi, H.Yamada

AU - T.Ohishi, T.Ohishi

AU - T.Chikyow, T.Chikyow

AU - Oishi, Tomoji

PY - 2011/5/25

Y1 - 2011/5/25

M3 - Article

JO - 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

JF - 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

ER -