Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

T.Nabatame T.Nabatame, M.Kimura M.Kimura, H.Yamada A.Ohi, T.Ohishi T.Ohishi, T.Chikyow T.Chikyow, Tomoji Oishi

Research output: Contribution to journal › Article

Original language	English
Journal	6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
Publication status	Published - 2011 May 25

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title = "Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift",

author = "T.Nabatame T.Nabatame and M.Kimura M.Kimura and H.Yamada A.Ohi and T.Ohishi T.Ohishi and T.Chikyow T.Chikyow and Tomoji Oishi",

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language = "English",

journal = "6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)",

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T1 - Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift

AU - T.Nabatame, T.Nabatame

AU - M.Kimura, M.Kimura

AU - A.Ohi, H.Yamada

AU - T.Ohishi, T.Ohishi

AU - T.Chikyow, T.Chikyow

AU - Oishi, Tomoji

PY - 2011/5/25

Y1 - 2011/5/25

M3 - Article

JO - 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

JF - 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

ER -