| Original language | English |
|---|---|
| Journal | 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) |
| Publication status | Published - 2011 May 25 |
Cite this
T.Nabatame, T. N., M.Kimura, M. K., A.Ohi, H. Y., T.Ohishi, T. O., T.Chikyow, T. C., & Oishi, T. (2011). Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift. 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI).
Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift. / T.Nabatame, T.Nabatame; M.Kimura, M.Kimura; A.Ohi, H.Yamada; T.Ohishi, T.Ohishi; T.Chikyow, T.Chikyow; Oishi, Tomoji.
In: 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 25.05.2011.Research output: Contribution to journal › Article
T.Nabatame, TN, M.Kimura, MK, A.Ohi, HY, T.Ohishi, TO, T.Chikyow, TC & Oishi, T 2011, 'Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift', 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI).
T.Nabatame TN, M.Kimura MK, A.Ohi HY, T.Ohishi TO, T.Chikyow TC, Oishi T. Influence of oxygene transfer in Hf-based high-k dielectrics on flatband voltage shift. 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI). 2011 May 25.
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author = "T.Nabatame T.Nabatame and M.Kimura M.Kimura and H.Yamada A.Ohi and T.Ohishi T.Ohishi and T.Chikyow T.Chikyow and Tomoji Oishi",
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AU - T.Nabatame, T.Nabatame
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AU - A.Ohi, H.Yamada
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AU - T.Chikyow, T.Chikyow
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