Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors

Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono

Research output: Contribution to journalArticle

Abstract

We investigated the influence of post-deposition annealing (PDA) temperature on the characteristics of Pt/Al2O3/n-β-Ga2O3 MOS capacitors. Electrical properties such as the flatband voltage (Vfb) shift, Vfb hysteresis, fixed charge (QIL), interface state density (Dit) and leakage current could be divided into two groups such as a low PDA temperature range below 600 °C and a high temperature range above 700 °C. The capacitors with a low PDA temperature exhibited superior electrical properties compared to the capacitors with a high PDA temperature, excluding leakage current property. We found that 700 °C is a critical PDA temperature because Al2O3 film starts to crystallize and solid-solution reaction of Al2O3 gate insulator and β-Ga2O3 substrate also occurs, resulting in Ga diffusion into the Al2O3 film and large roughness at Al2O3/β-Ga2O3 interface. These lead to a large Dit and positive Vfb shift at 700 °C. Even in a low PDA temperature range, it is clear that capacitor at 300 °C exhibited superior electrical properties of Vfb shift of −0.23 V, QIL of 4.1 × 1011 cm−2, and Dit (1.6 × 1012 eV−1 cm−2 at Ec-E = 0.4 eV). Based on these experimental data, lower PDA temperature of 300 °C is suitable.

Original languageEnglish
Article number111040
JournalMicroelectronic Engineering
Volume216
DOIs
Publication statusPublished - 2019 Aug 15

Fingerprint

MOS capacitors
capacitors
Annealing
annealing
electrical properties
Temperature
Electric properties
Capacitors
temperature
shift
Leakage currents
leakage
Interface states
solid solutions
roughness
Hysteresis
hysteresis
Solid solutions
insulators
Surface roughness

Keywords

  • Al2O3
  • Atomic layer deposition (ALD)
  • MOSCAPs
  • Postdeposition annealing (PDA)
  • β-Ga2O3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors. / Hirose, Masafumi; Nabatame, Toshihide; Yuge, Kazuya; Maeda, Erika; Ohi, Akihiko; Ikeda, Naoki; Irokawa, Yoshihiro; Iwai, Hideo; Yasufuku, Hideyuki; Kawada, Satoshi; Takahashi, Makoto; Ito, Kazuhiro; Koide, Yasuo; Kiyono, Hajime.

In: Microelectronic Engineering, Vol. 216, 111040, 15.08.2019.

Research output: Contribution to journalArticle

Hirose, M, Nabatame, T, Yuge, K, Maeda, E, Ohi, A, Ikeda, N, Irokawa, Y, Iwai, H, Yasufuku, H, Kawada, S, Takahashi, M, Ito, K, Koide, Y & Kiyono, H 2019, 'Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors', Microelectronic Engineering, vol. 216, 111040. https://doi.org/10.1016/j.mee.2019.111040
Hirose, Masafumi ; Nabatame, Toshihide ; Yuge, Kazuya ; Maeda, Erika ; Ohi, Akihiko ; Ikeda, Naoki ; Irokawa, Yoshihiro ; Iwai, Hideo ; Yasufuku, Hideyuki ; Kawada, Satoshi ; Takahashi, Makoto ; Ito, Kazuhiro ; Koide, Yasuo ; Kiyono, Hajime. / Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors. In: Microelectronic Engineering. 2019 ; Vol. 216.
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AU - Maeda, Erika

AU - Ohi, Akihiko

AU - Ikeda, Naoki

AU - Irokawa, Yoshihiro

AU - Iwai, Hideo

AU - Yasufuku, Hideyuki

AU - Kawada, Satoshi

AU - Takahashi, Makoto

AU - Ito, Kazuhiro

AU - Koide, Yasuo

AU - Kiyono, Hajime

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AB - We investigated the influence of post-deposition annealing (PDA) temperature on the characteristics of Pt/Al2O3/n-β-Ga2O3 MOS capacitors. Electrical properties such as the flatband voltage (Vfb) shift, Vfb hysteresis, fixed charge (QIL), interface state density (Dit) and leakage current could be divided into two groups such as a low PDA temperature range below 600 °C and a high temperature range above 700 °C. The capacitors with a low PDA temperature exhibited superior electrical properties compared to the capacitors with a high PDA temperature, excluding leakage current property. We found that 700 °C is a critical PDA temperature because Al2O3 film starts to crystallize and solid-solution reaction of Al2O3 gate insulator and β-Ga2O3 substrate also occurs, resulting in Ga diffusion into the Al2O3 film and large roughness at Al2O3/β-Ga2O3 interface. These lead to a large Dit and positive Vfb shift at 700 °C. Even in a low PDA temperature range, it is clear that capacitor at 300 °C exhibited superior electrical properties of Vfb shift of −0.23 V, QIL of 4.1 × 1011 cm−2, and Dit (1.6 × 1012 eV−1 cm−2 at Ec-E = 0.4 eV). Based on these experimental data, lower PDA temperature of 300 °C is suitable.

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