Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors

Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono

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