Abstract
We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.
| Original language | English |
|---|---|
| Title of host publication | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 368-370 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781538665084 |
| DOIs | |
| Publication status | Published - 2019 Mar 1 |
| Event | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 2019 Mar 12 → 2019 Mar 15 |
Publication series
| Name | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
|---|
Conference
| Conference | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
|---|---|
| Country | Singapore |
| City | Singapore |
| Period | 19/3/12 → 19/3/15 |
Fingerprint
Keywords
- AlO and Interface
- GaN
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Hardware and Architecture
Cite this
Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. / Yuge, Kazuya; Nabatame, Toshihide; Irokawa, Yoshihiro; Ohi, Akihiko; Ikeda, Naoki; Uedono, Akira; Sang, Liwen; Koide, Yasuo; Ohishi, Tomoji.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 368-370 8731166 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN
AU - Yuge, Kazuya
AU - Nabatame, Toshihide
AU - Irokawa, Yoshihiro
AU - Ohi, Akihiko
AU - Ikeda, Naoki
AU - Uedono, Akira
AU - Sang, Liwen
AU - Koide, Yasuo
AU - Ohishi, Tomoji
PY - 2019/3/1
Y1 - 2019/3/1
N2 - We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.
AB - We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.
KW - AlO and Interface
KW - GaN
UR - http://www.scopus.com/inward/record.url?scp=85067790296&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85067790296&partnerID=8YFLogxK
U2 - 10.1109/EDTM.2019.8731166
DO - 10.1109/EDTM.2019.8731166
M3 - Conference contribution
AN - SCOPUS:85067790296
T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
SP - 368
EP - 370
BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PB - Institute of Electrical and Electronics Engineers Inc.
ER -