Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Kazuya Yuge; Toshihide Nabatame; Yoshihiro Irokawa; Akihiko Ohi; Naoki Ikeda; Akira Uedono; Liwen Sang; Yasuo Koide; Tomoji Ohishi

doi:10.1109/EDTM.2019.8731166

Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN

Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Akira Uedono, Liwen Sang, Yasuo Koide, Tomoji Ohishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al₂O₃/n-GaN capacitors in shallow (around E_c) and deep (around E_v) band regions. Interface state density (D_it) estimated by conductance method increased in shallow band region at Al₂O₃/n-GaN interface after PDA at 900°C. In contrast, another D_it estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from V_fb shift also decreased after PDA at 900°C.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	368-370
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731166
Publication status	Published - 2019 Mar
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 2019 Mar 12 → 2019 Mar 15

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country	Singapore
City	Singapore
Period	19/3/12 → 19/3/15

Keywords

AlO and Interface
GaN

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Hardware and Architecture

Access to Document

10.1109/EDTM.2019.8731166

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Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y., & Ohishi, T. (2019). Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 368-370). [8731166] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731166

Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. / Yuge, Kazuya; Nabatame, Toshihide; Irokawa, Yoshihiro; Ohi, Akihiko; Ikeda, Naoki; Uedono, Akira; Sang, Liwen; Koide, Yasuo; Ohishi, Tomoji.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 368-370 8731166 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yuge, K, Nabatame, T, Irokawa, Y, Ohi, A, Ikeda, N, Uedono, A, Sang, L, Koide, Y & Ohishi, T 2019, Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731166, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 368-370, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731166

Yuge K, Nabatame T, Irokawa Y, Ohi A, Ikeda N, Uedono A et al. Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 368-370. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731166

Yuge, Kazuya ; Nabatame, Toshihide ; Irokawa, Yoshihiro ; Ohi, Akihiko ; Ikeda, Naoki ; Uedono, Akira ; Sang, Liwen ; Koide, Yasuo ; Ohishi, Tomoji. / Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 368-370 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

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abstract = "We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.",

keywords = "AlO and Interface, GaN",

author = "Kazuya Yuge and Toshihide Nabatame and Yoshihiro Irokawa and Akihiko Ohi and Naoki Ikeda and Akira Uedono and Liwen Sang and Yasuo Koide and Tomoji Ohishi",

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AU - Ohi, Akihiko

AU - Ikeda, Naoki

AU - Uedono, Akira

AU - Sang, Liwen

AU - Koide, Yasuo

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AB - We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.

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