@inproceedings{00422c2e176e4b68bb9ab48e72a1f260,
title = "Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN",
abstract = "We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.",
keywords = "AlO and Interface, GaN",
author = "Kazuya Yuge and Toshihide Nabatame and Yoshihiro Irokawa and Akihiko Ohi and Naoki Ikeda and Akira Uedono and Liwen Sang and Yasuo Koide and Tomoji Ohishi",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731166",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "368--370",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
note = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
}