Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Akira Uedono, Liwen Sang, Yasuo Koide, Tomoji Ohishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages368-370
Number of pages3
ISBN (Electronic)9781538665084
DOIs
Publication statusPublished - 2019 Mar 1
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 2019 Mar 122019 Mar 15

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period19/3/1219/3/15

Fingerprint

Annealing
annealing
Interface states
Capacitors
capacitors
shift

Keywords

  • AlO and Interface
  • GaN

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

Cite this

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., ... Ohishi, T. (2019). Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 368-370). [8731166] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731166

Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. / Yuge, Kazuya; Nabatame, Toshihide; Irokawa, Yoshihiro; Ohi, Akihiko; Ikeda, Naoki; Uedono, Akira; Sang, Liwen; Koide, Yasuo; Ohishi, Tomoji.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 368-370 8731166 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yuge, K, Nabatame, T, Irokawa, Y, Ohi, A, Ikeda, N, Uedono, A, Sang, L, Koide, Y & Ohishi, T 2019, Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731166, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 368-370, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731166
Yuge K, Nabatame T, Irokawa Y, Ohi A, Ikeda N, Uedono A et al. Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 368-370. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731166
Yuge, Kazuya ; Nabatame, Toshihide ; Irokawa, Yoshihiro ; Ohi, Akihiko ; Ikeda, Naoki ; Uedono, Akira ; Sang, Liwen ; Koide, Yasuo ; Ohishi, Tomoji. / Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 368-370 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).
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