Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

S. Saini, Paolo Mele, H. Honda, K. Matsumoto, K. Miyazaki, L. Molina Luna, P. E. Hopkins

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400C to 600C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600C.

Original languageEnglish
Pages (from-to)1547-1553
Number of pages7
JournalJournal of Electronic Materials
Volume44
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1
Externally publishedYes

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Cooling
cooling
atmospheres
Thin films
thin films
Aluminum Oxide
Sapphire
figure of merit
Temperature
Carrier concentration
temperature
sapphire
Vacuum
Oxygen
vacuum
electrical resistivity
oxygen
Substrates

Keywords

  • Al-doped ZnO thin films
  • c-Axis orientation
  • power factor
  • pulsed laser deposition
  • Seebeck coefficient
  • thermoelectric oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition. / Saini, S.; Mele, Paolo; Honda, H.; Matsumoto, K.; Miyazaki, K.; Luna, L. Molina; Hopkins, P. E.

In: Journal of Electronic Materials, Vol. 44, No. 6, 01.06.2015, p. 1547-1553.

Research output: Contribution to journalArticle

Saini, S. ; Mele, Paolo ; Honda, H. ; Matsumoto, K. ; Miyazaki, K. ; Luna, L. Molina ; Hopkins, P. E. / Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition. In: Journal of Electronic Materials. 2015 ; Vol. 44, No. 6. pp. 1547-1553.
@article{3182c7e29a444c058ea9b6bba1ff5c2d,
title = "Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2{\%} Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition",
abstract = "We have investigated the thermoelectric properties of 2{\%} Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400∘C to 600∘C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600∘C.",
keywords = "Al-doped ZnO thin films, c-Axis orientation, power factor, pulsed laser deposition, Seebeck coefficient, thermoelectric oxides",
author = "S. Saini and Paolo Mele and H. Honda and K. Matsumoto and K. Miyazaki and Luna, {L. Molina} and Hopkins, {P. E.}",
year = "2015",
month = "6",
day = "1",
doi = "10.1007/s11664-014-3471-0",
language = "English",
volume = "44",
pages = "1547--1553",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

TY - JOUR

T1 - Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

AU - Saini, S.

AU - Mele, Paolo

AU - Honda, H.

AU - Matsumoto, K.

AU - Miyazaki, K.

AU - Luna, L. Molina

AU - Hopkins, P. E.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400∘C to 600∘C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600∘C.

AB - We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400∘C to 600∘C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600∘C.

KW - Al-doped ZnO thin films

KW - c-Axis orientation

KW - power factor

KW - pulsed laser deposition

KW - Seebeck coefficient

KW - thermoelectric oxides

UR - http://www.scopus.com/inward/record.url?scp=84940006619&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940006619&partnerID=8YFLogxK

U2 - 10.1007/s11664-014-3471-0

DO - 10.1007/s11664-014-3471-0

M3 - Article

VL - 44

SP - 1547

EP - 1553

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -