Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

S. Saini, Paolo Mele, H. Honda, K. Matsumoto, K. Miyazaki, L. Molina Luna, P. E. Hopkins

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400C to 600C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600C.

Original languageEnglish
Pages (from-to)1547-1553
Number of pages7
JournalJournal of Electronic Materials
Volume44
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1
Externally publishedYes

Keywords

  • Al-doped ZnO thin films
  • c-Axis orientation
  • power factor
  • pulsed laser deposition
  • Seebeck coefficient
  • thermoelectric oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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