Influence of reaction time, quenching and room aging in lead doped BiCaSrCuO high temperature superconductors

M. Muralidhar; D. Mangapathi Rao; V. Hari Babu

doi:10.1016/0254-0584(91)90126-F

Influence of reaction time, quenching and room aging in lead doped BiCaSrCuO high temperature superconductors

M. Muralidhar, D. Mangapathi Rao, V. Hari Babu

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Pure and lead doped BiCaSrCuO (2223) compounds have been prepared by solid state reaction at 850°C. In undoped sample the T_c (zero) has been observed at 79K where as in Bi_1.75Pb_0.25Ca₂Sr₂Cu₃O_y T_c was obtained at 107K. Increasing the reaction time and rapidly quenching the samples by immersing them in liquid nitrogen, resulted in decrease of T_c. In rapidly quenched samples stepped resistive transitions have been observed. Aging at room temperature over long periods (~Two years) also showed a decrease in T_c and growth of low T_c (2122) phase. Heat treatment and oxygen annealing recovered the high T_c (2223) phase. The growth of low T_c (2122) and high T_c (2223) phase and their inter relationship have been explained.

Original language	English
Pages (from-to)	297-305
Number of pages	9
Journal	Materials Chemistry and Physics
Volume	27
Issue number	3
DOIs	https://doi.org/10.1016/0254-0584(91)90126-F
Publication status	Published - 1991 Mar
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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title = "Influence of reaction time, quenching and room aging in lead doped BiCaSrCuO high temperature superconductors",

abstract = "Pure and lead doped BiCaSrCuO (2223) compounds have been prepared by solid state reaction at 850°C. In undoped sample the Tc (zero) has been observed at 79K where as in Bi1.75Pb0.25Ca2Sr2Cu3 Oy Tc was obtained at 107K. Increasing the reaction time and rapidly quenching the samples by immersing them in liquid nitrogen, resulted in decrease of Tc. In rapidly quenched samples stepped resistive transitions have been observed. Aging at room temperature over long periods (~Two years) also showed a decrease in Tc and growth of low Tc (2122) phase. Heat treatment and oxygen annealing recovered the high Tc (2223) phase. The growth of low Tc (2122) and high Tc (2223) phase and their inter relationship have been explained.",

author = "M. Muralidhar and Rao, {D. Mangapathi} and {Hari Babu}, V.",

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T1 - Influence of reaction time, quenching and room aging in lead doped BiCaSrCuO high temperature superconductors

AU - Muralidhar, M.

AU - Rao, D. Mangapathi

AU - Hari Babu, V.

PY - 1991/3

Y1 - 1991/3

N2 - Pure and lead doped BiCaSrCuO (2223) compounds have been prepared by solid state reaction at 850°C. In undoped sample the Tc (zero) has been observed at 79K where as in Bi1.75Pb0.25Ca2Sr2Cu3 Oy Tc was obtained at 107K. Increasing the reaction time and rapidly quenching the samples by immersing them in liquid nitrogen, resulted in decrease of Tc. In rapidly quenched samples stepped resistive transitions have been observed. Aging at room temperature over long periods (~Two years) also showed a decrease in Tc and growth of low Tc (2122) phase. Heat treatment and oxygen annealing recovered the high Tc (2223) phase. The growth of low Tc (2122) and high Tc (2223) phase and their inter relationship have been explained.

AB - Pure and lead doped BiCaSrCuO (2223) compounds have been prepared by solid state reaction at 850°C. In undoped sample the Tc (zero) has been observed at 79K where as in Bi1.75Pb0.25Ca2Sr2Cu3 Oy Tc was obtained at 107K. Increasing the reaction time and rapidly quenching the samples by immersing them in liquid nitrogen, resulted in decrease of Tc. In rapidly quenched samples stepped resistive transitions have been observed. Aging at room temperature over long periods (~Two years) also showed a decrease in Tc and growth of low Tc (2122) phase. Heat treatment and oxygen annealing recovered the high Tc (2223) phase. The growth of low Tc (2122) and high Tc (2223) phase and their inter relationship have been explained.

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