Infrared absorption study of HfO 2 and HfO 2/Si interface ranging from 200cm -1 to 2000cm -1

Kazuyuki Tomida, Haruka Shimizu, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

In this paper, we report infrared absorption studies of HfO 2, HfO 2/Si interface and Hf (1-x)Si xO y. Both HfO 2 crystallization and SiO 2 formation at the interface can be clearly detected in the absorption spectra in the far and middle infrared regions, respectively. By measuring the intensity change and the peak shift of infrared absorption spectra as functions of annealing temperature and time together with XRD patterns, we discuss a difference of the amorphous structure between HfO 2 and SiO 2, and also show an evolution of HfO 2 crystallization in the monoclinic phase up to 1000°C. On the other hand, it is shown that the interfacial SiO 2 layer is qualitatively similar to the thermally grown SiO 2. Furthermore, it is demonstrated that a Si incorporation into HfO 2 film significantly changes the IR absorption spectra, and that the Hf (1-x)Si xO y film is phase-separated with an appearance of modified monoclinic phase by higher temperature annealing.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJ. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R.M. Wallace, S. Guha, H. Koinuma
Pages319-324
Number of pages6
Volume811
Publication statusPublished - 2004
Externally publishedYes
EventIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States
Duration: 2004 Apr 132004 Apr 16

Other

OtherIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions
CountryUnited States
CitySan Francisco, CA
Period04/4/1304/4/16

Fingerprint

Infrared absorption
Absorption spectra
Crystallization
Annealing
Infrared radiation
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Tomida, K., Shimizu, H., Kita, K., Kyuno, K., & Toriumi, A. (2004). Infrared absorption study of HfO 2 and HfO 2/Si interface ranging from 200cm -1 to 2000cm -1 In J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, ... H. Koinuma (Eds.), Materials Research Society Symposium Proceedings (Vol. 811, pp. 319-324)

Infrared absorption study of HfO 2 and HfO 2/Si interface ranging from 200cm -1 to 2000cm -1 . / Tomida, Kazuyuki; Shimizu, Haruka; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

Materials Research Society Symposium Proceedings. ed. / J. Morais; D. Kumar; M. Houssa; R.K. Singh; D. Landheer; R. Ramesh; R.M. Wallace; S. Guha; H. Koinuma. Vol. 811 2004. p. 319-324.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tomida, K, Shimizu, H, Kita, K, Kyuno, K & Toriumi, A 2004, Infrared absorption study of HfO 2 and HfO 2/Si interface ranging from 200cm -1 to 2000cm -1 in J Morais, D Kumar, M Houssa, RK Singh, D Landheer, R Ramesh, RM Wallace, S Guha & H Koinuma (eds), Materials Research Society Symposium Proceedings. vol. 811, pp. 319-324, Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions, San Francisco, CA, United States, 04/4/13.
Tomida K, Shimizu H, Kita K, Kyuno K, Toriumi A. Infrared absorption study of HfO 2 and HfO 2/Si interface ranging from 200cm -1 to 2000cm -1 In Morais J, Kumar D, Houssa M, Singh RK, Landheer D, Ramesh R, Wallace RM, Guha S, Koinuma H, editors, Materials Research Society Symposium Proceedings. Vol. 811. 2004. p. 319-324
Tomida, Kazuyuki ; Shimizu, Haruka ; Kita, Koji ; Kyuno, Kentaro ; Toriumi, Akira. / Infrared absorption study of HfO 2 and HfO 2/Si interface ranging from 200cm -1 to 2000cm -1 Materials Research Society Symposium Proceedings. editor / J. Morais ; D. Kumar ; M. Houssa ; R.K. Singh ; D. Landheer ; R. Ramesh ; R.M. Wallace ; S. Guha ; H. Koinuma. Vol. 811 2004. pp. 319-324
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