Infrared absorption study of HfO2 and HfO2/Si interface ranging from 200cm-1 to 2000cm-1

Kazuyuki Tomida, Haruka Shimizu, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalConference article

Abstract

In this paper, we report infrared absorption studies of HfO2, HfO2/Si interface and Hf(1-x)SixOy. Both HfO2 crystallization and SiO2 formation at the interface can be clearly detected in the absorption spectra in the far and middle infrared regions, respectively. By measuring the intensity change and the peak shift of infrared absorption spectra as functions of annealing temperature and time together with XRD patterns, we discuss a difference of the amorphous structure between HfO2 and SiO2, and also show an evolution of HfO2 crystallization in the monoclinic phase up to 1000°C. On the other hand, it is shown that the interfacial SiO2 layer is qualitatively similar to the thermally grown SiO2. Furthermore, it is demonstrated that a Si incorporation into HfO2 film significantly changes the IR absorption spectra, and that the Hf (1-x)SixOy film is phase-separated with an appearance of modified monoclinic phase by higher temperature annealing.

Original languageEnglish
Pages (from-to)319-324
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume811
Publication statusPublished - 2004 Dec 1
EventIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States
Duration: 2004 Apr 132004 Apr 16

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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