InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

T. Egawa, B. Zhang, N. Nishikawa, Hiroyasu Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

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Abstract

We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 , an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.

Original languageEnglish
Pages (from-to)528-530
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number1
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes

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metalorganic chemical vapor deposition
light emitting diodes
quantum wells
output
sapphire
electric potential
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition. / Egawa, T.; Zhang, B.; Nishikawa, N.; Ishikawa, Hiroyasu; Jimbo, T.; Umeno, M.

In: Journal of Applied Physics, Vol. 91, No. 1, 01.01.2002, p. 528-530.

Research output: Contribution to journalArticle

Egawa, T. ; Zhang, B. ; Nishikawa, N. ; Ishikawa, Hiroyasu ; Jimbo, T. ; Umeno, M. / InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 1. pp. 528-530.
@article{e7436f46ea42411ba8bda94613288603,
title = "InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition",
abstract = "We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 , an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.",
author = "T. Egawa and B. Zhang and N. Nishikawa and Hiroyasu Ishikawa and T. Jimbo and M. Umeno",
year = "2002",
month = "1",
day = "1",
doi = "10.1063/1.1408264",
language = "English",
volume = "91",
pages = "528--530",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

AU - Egawa, T.

AU - Zhang, B.

AU - Nishikawa, N.

AU - Ishikawa, Hiroyasu

AU - Jimbo, T.

AU - Umeno, M.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 , an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.

AB - We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 , an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.

UR - http://www.scopus.com/inward/record.url?scp=0036139359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036139359&partnerID=8YFLogxK

U2 - 10.1063/1.1408264

DO - 10.1063/1.1408264

M3 - Article

VL - 91

SP - 528

EP - 530

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

ER -