InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

T. Egawa; B. Zhang; N. Nishikawa; H. Ishikawa; T. Jimbo; M. Umeno

doi:10.1063/1.1408264

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

T. Egawa, B. Zhang, N. Nishikawa, H. Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al_0.27Ga_0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 , an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.

Original language	English
Pages (from-to)	528-530
Number of pages	3
Journal	Journal of Applied Physics
Volume	91
Issue number	1
DOIs	https://doi.org/10.1063/1.1408264
Publication status	Published - 2002 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1408264

Cite this

@article{e7436f46ea42411ba8bda94613288603,

title = "InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition",

abstract = "We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 , an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.",

author = "T. Egawa and B. Zhang and N. Nishikawa and H. Ishikawa and T. Jimbo and M. Umeno",

year = "2002",

month = jan,

day = "1",

doi = "10.1063/1.1408264",

language = "English",

volume = "91",

pages = "528--530",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

AU - Egawa, T.

AU - Zhang, B.

AU - Nishikawa, N.

AU - Ishikawa, H.

AU - Jimbo, T.

AU - Umeno, M.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 , an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.

AB - We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 , an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27°C.

UR - http://www.scopus.com/inward/record.url?scp=0036139359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036139359&partnerID=8YFLogxK

U2 - 10.1063/1.1408264

DO - 10.1063/1.1408264

M3 - Article

AN - SCOPUS:0036139359

SN - 0021-8979

VL - 91

SP - 528

EP - 530

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this