InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition

Baijun Zhang, Takashi Egawa, Yang Liu, Hiroyasu Ishikawa, Takashi Jimbo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

An InGaN multiple-quantum-well (MQW) LED grown on AlN/sapphire template is reported. Comparing with the conventional LED on sapphire using a low temperature (LT) buffer layer, the LED on AlN/sapphire template shows better electrical and optical characteristics. The crystalline quality of the LED structure was investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The zeroth, -first-and-second-order satellite peaks and the Pendellösung fringes can be seen clearly in (0004) XRD ω/2θ rocking curves for the LED on AlN/sapphire template. While, for the LED on sapphire, only the zeroth and -first-order satellite peaks can be seen. The full width at half maximum (FWHM) of GaN in (0004) ω scan is about 82.8 and 231.6 arcsec for the LED grown on AlN/sapphire template and sapphire, respectively. The dislocation density is 5 × 10 7-3 × 10 8 cm -2 for the LED on AlN/sapphire template and 2-5 × 10 9 cm -2 for the LED on sapphire. The reverse leakage current of the LED on AlN/sapphire template is over one order of magnitude lower than that on sapphire due to the low threading dislocation density in the epilayer. The optical power of the LED on AlN/sapphire template increased sublinearly up to 300 mA injection current.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2244-2247
Number of pages4
Edition7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
CountryJapan
CityNara
Period03/5/2503/5/30

Fingerprint

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Semiconductor quantum wells
metalorganic chemical vapor deposition
Light emitting diodes
sapphire
light emitting diodes
templates
quantum wells
Satellites
X ray diffraction
Epilayers
Buffer layers
Full width at half maximum
diffraction
Leakage currents
leakage
x rays
buffers

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Zhang, B., Egawa, T., Liu, Y., Ishikawa, H., & Jimbo, T. (2003). InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition. In Physica Status Solidi C: Conferences (7 ed., pp. 2244-2247) https://doi.org/10.1002/pssc.200303485

InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition. / Zhang, Baijun; Egawa, Takashi; Liu, Yang; Ishikawa, Hiroyasu; Jimbo, Takashi.

Physica Status Solidi C: Conferences. 7. ed. 2003. p. 2244-2247.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, B, Egawa, T, Liu, Y, Ishikawa, H & Jimbo, T 2003, InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition. in Physica Status Solidi C: Conferences. 7 edn, pp. 2244-2247, 5th International Conference on Nitride Semiconductors, ICNS 2003, Nara, Japan, 03/5/25. https://doi.org/10.1002/pssc.200303485
Zhang, Baijun ; Egawa, Takashi ; Liu, Yang ; Ishikawa, Hiroyasu ; Jimbo, Takashi. / InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition. Physica Status Solidi C: Conferences. 7. ed. 2003. pp. 2244-2247
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abstract = "An InGaN multiple-quantum-well (MQW) LED grown on AlN/sapphire template is reported. Comparing with the conventional LED on sapphire using a low temperature (LT) buffer layer, the LED on AlN/sapphire template shows better electrical and optical characteristics. The crystalline quality of the LED structure was investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The zeroth, -first-and-second-order satellite peaks and the Pendell{\"o}sung fringes can be seen clearly in (0004) XRD ω/2θ rocking curves for the LED on AlN/sapphire template. While, for the LED on sapphire, only the zeroth and -first-order satellite peaks can be seen. The full width at half maximum (FWHM) of GaN in (0004) ω scan is about 82.8 and 231.6 arcsec for the LED grown on AlN/sapphire template and sapphire, respectively. The dislocation density is 5 × 10 7-3 × 10 8 cm -2 for the LED on AlN/sapphire template and 2-5 × 10 9 cm -2 for the LED on sapphire. The reverse leakage current of the LED on AlN/sapphire template is over one order of magnitude lower than that on sapphire due to the low threading dislocation density in the epilayer. The optical power of the LED on AlN/sapphire template increased sublinearly up to 300 mA injection current.",
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