InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates

B. J. Zhang, T. Egawa, Hiroyasu Ishikawa, N. Nishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

An intermediate layer consisting of AIN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage te about 8.0 and 16.0 V for top and backside n-type electrodes, respectively. The EL peaks at ∼506 nm correspond to near band edge luminescence. The full width at half maximum of EL spectrum is 32 run at 20 mA current. The output power is 23.0 and 19.4 μW at 20 mA for top and backside n-type electrodes, respectively. To our knowledge, this value is the best result of nitride LEDs grown on Si substrate even though it is less than the one on sapphire and SiC substrates.

Original languageEnglish
Pages (from-to)151-154
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume188
Issue number1
DOIs
Publication statusPublished - 2001 Nov
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
Substrates
Electrodes
electrodes
Aluminum Oxide
Full width at half maximum
Sapphire
Nitrides
nitrides
Luminescence
Luminance
brightness
sapphire
cracks
wafers
luminescence
Cracks

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates. / Zhang, B. J.; Egawa, T.; Ishikawa, Hiroyasu; Nishikawa, N.; Jimbo, T.; Umeno, M.

In: Physica Status Solidi (A) Applied Research, Vol. 188, No. 1, 11.2001, p. 151-154.

Research output: Contribution to journalArticle

Zhang, B. J. ; Egawa, T. ; Ishikawa, Hiroyasu ; Nishikawa, N. ; Jimbo, T. ; Umeno, M. / InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates. In: Physica Status Solidi (A) Applied Research. 2001 ; Vol. 188, No. 1. pp. 151-154.
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