Injection-locked fabry-Pérot laser diode transmitters with semiconductor optical amplifier for WDM-PON

Norio Kashima

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This paper describes the investigation of side-mode injection-locked Fabry-Pérot laser diode (FP-LD) transmitters for wavelength division multiplex passive optical network (WDM-PON) applications. We teat the case that transmitters are injection locked by intensity-modulated downstream signal light. In this case, an extinction ratio (Ex) of downstream signal light is very important for both sending and receiving properties, and the Ex influences the bit error rate (BER) property. It is desirable to use downstream light with a high Ex for minimizing the receiver power penalty Δ P of downstream data. However, the downstream light with a high Ex degrades the locking property, and it results in the BER degradation of upstream data. This paper clarifies that there is a tradeoff of power penalties Δ P for up- and downstream data, theoretically. We propose a method to reduce the penalty Δ P induced by a high Ex. Fundamental transmission experiments using a semiconductor optical amplifier (SOA) confirmed the effectiveness of the proposed method. We also discuss the proposed method.

Original languageEnglish
Pages (from-to)2132-2139
Number of pages8
JournalJournal of Lightwave Technology
Volume27
Issue number12
DOIs
Publication statusPublished - 2009 Jun 15

Keywords

  • Direct modulation
  • Fabry-Pérot laser diode (FP-LD)
  • Injection locking
  • Laser diode
  • Optical access network
  • Passive optical network
  • Wavelength division multiplex (WDM)

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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