Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films formed by various techniques

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Abstract

Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films is studied. Al wiring corrosion and underlayer SiO2 etching problems are the major issues for the use of SiOF interlayer dielectric films. To clarify the mechanism, three kinds of SiOF films have been used for this study. They are: (i) a fluorinated silicon oxide (SiOF) film prepared by room-temperature chemical vapour deposition (RTCVD) using fluorotriethoxysilane and pure water as gas sources; (ii) a fluorinated spin-on-glass (SOG) film prepared by fluorotrialkoxysilane vapor treatment (FAST); and (iii) a room-temperature liquid phase deposition (LPD) SiOF film. The initial refractive indices for the RTCVD-SiOF, FAST-SOG and LPD-SiOF films are 1.400, 1.398 and 1.433, respectively. After conducting a pressure cooker test (PCT) at 125°C for 520 h, the refractive indices for the RTCVD-SiOF, FAST-SOG and LPD-SiOF films increase to 1.450,1.440 and 1.436, respectively. The Si-O bond peak absorption coefficient for the LPD-SiOF film decreases at the early stage of PCT, but those for the RTCVD-SiOF and FAST-SOG films increase at the early stage of PCT. The initial Si-F bond peak absorption coefficient for the RTCVD-SiOF film is much higher than those for the LPD-SiOF and FAST-SOG films. It decreases drastically in the PCT time ranging from 0 to 140 h. The Si-F bond peak absorption coefficients for the FAST-SOG and LPD-SiOF films show a slow reduction, as compared with that for the RTCVD-SiOF film at the early stage of PCT. Although the OH peak absorption coefficients for the RTCVD-SiOF and FAST-SOG films increase at the early stage of PCT and level off at 50 h, that for the LPD-SiOF film increases at 306 h. After conducting 520 h PCT, concentrations of fluorine atoms for the RTCVD-SiOF and FAST-SOG films decrease by three orders and two orders of magnitudes, respectively. However, the LPD-SiOF film has a limited change in the fluorine concentration, as compared with those for the RTCVD-SiOF and FAST-SOG films. The thicknesses for all of the films remain almost unchanged after PCT for 520 h.

Original languageEnglish
Pages (from-to)28-31
Number of pages4
JournalThin Solid Films
Volume278
Issue number1-2
Publication statusPublished - 1996 May 15

Fingerprint

Silicon oxides
silicon oxides
Oxide films
oxide films
Chemical vapor deposition
Vapors
liquid phases
vapor deposition
vapors
Glass
room temperature
glass
Liquids
absorptivity
Temperature
Fluorine
Refractive index
fluorine
refractivity
conduction

Keywords

  • Corrosion
  • Dielectric properties
  • Fluorine
  • Silicon oxide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films formed by various techniques. / Homma, Tetsuya.

In: Thin Solid Films, Vol. 278, No. 1-2, 15.05.1996, p. 28-31.

Research output: Contribution to journalArticle

@article{6bf067f72f6a4050923890a8cd7b8fe5,
title = "Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films formed by various techniques",
abstract = "Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films is studied. Al wiring corrosion and underlayer SiO2 etching problems are the major issues for the use of SiOF interlayer dielectric films. To clarify the mechanism, three kinds of SiOF films have been used for this study. They are: (i) a fluorinated silicon oxide (SiOF) film prepared by room-temperature chemical vapour deposition (RTCVD) using fluorotriethoxysilane and pure water as gas sources; (ii) a fluorinated spin-on-glass (SOG) film prepared by fluorotrialkoxysilane vapor treatment (FAST); and (iii) a room-temperature liquid phase deposition (LPD) SiOF film. The initial refractive indices for the RTCVD-SiOF, FAST-SOG and LPD-SiOF films are 1.400, 1.398 and 1.433, respectively. After conducting a pressure cooker test (PCT) at 125°C for 520 h, the refractive indices for the RTCVD-SiOF, FAST-SOG and LPD-SiOF films increase to 1.450,1.440 and 1.436, respectively. The Si-O bond peak absorption coefficient for the LPD-SiOF film decreases at the early stage of PCT, but those for the RTCVD-SiOF and FAST-SOG films increase at the early stage of PCT. The initial Si-F bond peak absorption coefficient for the RTCVD-SiOF film is much higher than those for the LPD-SiOF and FAST-SOG films. It decreases drastically in the PCT time ranging from 0 to 140 h. The Si-F bond peak absorption coefficients for the FAST-SOG and LPD-SiOF films show a slow reduction, as compared with that for the RTCVD-SiOF film at the early stage of PCT. Although the OH peak absorption coefficients for the RTCVD-SiOF and FAST-SOG films increase at the early stage of PCT and level off at 50 h, that for the LPD-SiOF film increases at 306 h. After conducting 520 h PCT, concentrations of fluorine atoms for the RTCVD-SiOF and FAST-SOG films decrease by three orders and two orders of magnitudes, respectively. However, the LPD-SiOF film has a limited change in the fluorine concentration, as compared with those for the RTCVD-SiOF and FAST-SOG films. The thicknesses for all of the films remain almost unchanged after PCT for 520 h.",
keywords = "Corrosion, Dielectric properties, Fluorine, Silicon oxide",
author = "Tetsuya Homma",
year = "1996",
month = "5",
day = "15",
language = "English",
volume = "278",
pages = "28--31",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films formed by various techniques

AU - Homma, Tetsuya

PY - 1996/5/15

Y1 - 1996/5/15

N2 - Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films is studied. Al wiring corrosion and underlayer SiO2 etching problems are the major issues for the use of SiOF interlayer dielectric films. To clarify the mechanism, three kinds of SiOF films have been used for this study. They are: (i) a fluorinated silicon oxide (SiOF) film prepared by room-temperature chemical vapour deposition (RTCVD) using fluorotriethoxysilane and pure water as gas sources; (ii) a fluorinated spin-on-glass (SOG) film prepared by fluorotrialkoxysilane vapor treatment (FAST); and (iii) a room-temperature liquid phase deposition (LPD) SiOF film. The initial refractive indices for the RTCVD-SiOF, FAST-SOG and LPD-SiOF films are 1.400, 1.398 and 1.433, respectively. After conducting a pressure cooker test (PCT) at 125°C for 520 h, the refractive indices for the RTCVD-SiOF, FAST-SOG and LPD-SiOF films increase to 1.450,1.440 and 1.436, respectively. The Si-O bond peak absorption coefficient for the LPD-SiOF film decreases at the early stage of PCT, but those for the RTCVD-SiOF and FAST-SOG films increase at the early stage of PCT. The initial Si-F bond peak absorption coefficient for the RTCVD-SiOF film is much higher than those for the LPD-SiOF and FAST-SOG films. It decreases drastically in the PCT time ranging from 0 to 140 h. The Si-F bond peak absorption coefficients for the FAST-SOG and LPD-SiOF films show a slow reduction, as compared with that for the RTCVD-SiOF film at the early stage of PCT. Although the OH peak absorption coefficients for the RTCVD-SiOF and FAST-SOG films increase at the early stage of PCT and level off at 50 h, that for the LPD-SiOF film increases at 306 h. After conducting 520 h PCT, concentrations of fluorine atoms for the RTCVD-SiOF and FAST-SOG films decrease by three orders and two orders of magnitudes, respectively. However, the LPD-SiOF film has a limited change in the fluorine concentration, as compared with those for the RTCVD-SiOF and FAST-SOG films. The thicknesses for all of the films remain almost unchanged after PCT for 520 h.

AB - Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films is studied. Al wiring corrosion and underlayer SiO2 etching problems are the major issues for the use of SiOF interlayer dielectric films. To clarify the mechanism, three kinds of SiOF films have been used for this study. They are: (i) a fluorinated silicon oxide (SiOF) film prepared by room-temperature chemical vapour deposition (RTCVD) using fluorotriethoxysilane and pure water as gas sources; (ii) a fluorinated spin-on-glass (SOG) film prepared by fluorotrialkoxysilane vapor treatment (FAST); and (iii) a room-temperature liquid phase deposition (LPD) SiOF film. The initial refractive indices for the RTCVD-SiOF, FAST-SOG and LPD-SiOF films are 1.400, 1.398 and 1.433, respectively. After conducting a pressure cooker test (PCT) at 125°C for 520 h, the refractive indices for the RTCVD-SiOF, FAST-SOG and LPD-SiOF films increase to 1.450,1.440 and 1.436, respectively. The Si-O bond peak absorption coefficient for the LPD-SiOF film decreases at the early stage of PCT, but those for the RTCVD-SiOF and FAST-SOG films increase at the early stage of PCT. The initial Si-F bond peak absorption coefficient for the RTCVD-SiOF film is much higher than those for the LPD-SiOF and FAST-SOG films. It decreases drastically in the PCT time ranging from 0 to 140 h. The Si-F bond peak absorption coefficients for the FAST-SOG and LPD-SiOF films show a slow reduction, as compared with that for the RTCVD-SiOF film at the early stage of PCT. Although the OH peak absorption coefficients for the RTCVD-SiOF and FAST-SOG films increase at the early stage of PCT and level off at 50 h, that for the LPD-SiOF film increases at 306 h. After conducting 520 h PCT, concentrations of fluorine atoms for the RTCVD-SiOF and FAST-SOG films decrease by three orders and two orders of magnitudes, respectively. However, the LPD-SiOF film has a limited change in the fluorine concentration, as compared with those for the RTCVD-SiOF and FAST-SOG films. The thicknesses for all of the films remain almost unchanged after PCT for 520 h.

KW - Corrosion

KW - Dielectric properties

KW - Fluorine

KW - Silicon oxide

UR - http://www.scopus.com/inward/record.url?scp=0030145531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030145531&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030145531

VL - 278

SP - 28

EP - 31

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -