Abstract
We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - Electrochemical Society |
| Editors | P.C. Chang, K. Shiojima, D. Noel Buckley, S. Ahmed |
| Pages | 367-373 |
| Number of pages | 7 |
| Volume | PV 2005-04 |
| Publication status | Published - 2005 |
| Externally published | Yes |
| Event | 207th ECS Meeting - Quebec Duration: 2005 May 16 → 2005 May 20 |
Other
| Other | 207th ECS Meeting |
|---|---|
| City | Quebec |
| Period | 05/5/16 → 05/5/20 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
In0.3Ga0.7As plate crystal growth for substrates by the TLZ method. / Kinoshita, K.; Ogata, Y.; Adachi, S.; Natsuisaka, M.; Ishikawa, T.; Masaki, Tadahiko; Yoda, S.
Proceedings - Electrochemical Society. ed. / P.C. Chang; K. Shiojima; D. Noel Buckley; S. Ahmed. Vol. PV 2005-04 2005. p. 367-373.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - In0.3Ga0.7As plate crystal growth for substrates by the TLZ method
AU - Kinoshita, K.
AU - Ogata, Y.
AU - Adachi, S.
AU - Natsuisaka, M.
AU - Ishikawa, T.
AU - Masaki, Tadahiko
AU - Yoda, S.
PY - 2005
Y1 - 2005
N2 - We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.
AB - We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.
UR - http://www.scopus.com/inward/record.url?scp=31944451092&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=31944451092&partnerID=8YFLogxK
M3 - Conference contribution
VL - PV 2005-04
SP - 367
EP - 373
BT - Proceedings - Electrochemical Society
A2 - Chang, P.C.
A2 - Shiojima, K.
A2 - Noel Buckley, D.
A2 - Ahmed, S.
ER -