In0.3Ga0.7As plate crystal growth for substrates by the TLZ method

K. Kinoshita, Y. Ogata, S. Adachi, M. Natsuisaka, T. Ishikawa, Tadahiko Masaki, S. Yoda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsP.C. Chang, K. Shiojima, D. Noel Buckley, S. Ahmed
Pages367-373
Number of pages7
VolumePV 2005-04
Publication statusPublished - 2005
Externally publishedYes
Event207th ECS Meeting - Quebec
Duration: 2005 May 162005 May 20

Other

Other207th ECS Meeting
CityQuebec
Period05/5/1605/5/20

Fingerprint

Crystal growth
Crystals
Substrates
Mass transfer
Single crystals
Convection

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kinoshita, K., Ogata, Y., Adachi, S., Natsuisaka, M., Ishikawa, T., Masaki, T., & Yoda, S. (2005). In0.3Ga0.7As plate crystal growth for substrates by the TLZ method. In P. C. Chang, K. Shiojima, D. Noel Buckley, & S. Ahmed (Eds.), Proceedings - Electrochemical Society (Vol. PV 2005-04, pp. 367-373)

In0.3Ga0.7As plate crystal growth for substrates by the TLZ method. / Kinoshita, K.; Ogata, Y.; Adachi, S.; Natsuisaka, M.; Ishikawa, T.; Masaki, Tadahiko; Yoda, S.

Proceedings - Electrochemical Society. ed. / P.C. Chang; K. Shiojima; D. Noel Buckley; S. Ahmed. Vol. PV 2005-04 2005. p. 367-373.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kinoshita, K, Ogata, Y, Adachi, S, Natsuisaka, M, Ishikawa, T, Masaki, T & Yoda, S 2005, In0.3Ga0.7As plate crystal growth for substrates by the TLZ method. in PC Chang, K Shiojima, D Noel Buckley & S Ahmed (eds), Proceedings - Electrochemical Society. vol. PV 2005-04, pp. 367-373, 207th ECS Meeting, Quebec, 05/5/16.
Kinoshita K, Ogata Y, Adachi S, Natsuisaka M, Ishikawa T, Masaki T et al. In0.3Ga0.7As plate crystal growth for substrates by the TLZ method. In Chang PC, Shiojima K, Noel Buckley D, Ahmed S, editors, Proceedings - Electrochemical Society. Vol. PV 2005-04. 2005. p. 367-373
Kinoshita, K. ; Ogata, Y. ; Adachi, S. ; Natsuisaka, M. ; Ishikawa, T. ; Masaki, Tadahiko ; Yoda, S. / In0.3Ga0.7As plate crystal growth for substrates by the TLZ method. Proceedings - Electrochemical Society. editor / P.C. Chang ; K. Shiojima ; D. Noel Buckley ; S. Ahmed. Vol. PV 2005-04 2005. pp. 367-373
@inproceedings{c7731fa7df574b93a46624f5b7b15be3,
title = "In0.3Ga0.7As plate crystal growth for substrates by the TLZ method",
abstract = "We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.",
author = "K. Kinoshita and Y. Ogata and S. Adachi and M. Natsuisaka and T. Ishikawa and Tadahiko Masaki and S. Yoda",
year = "2005",
language = "English",
volume = "PV 2005-04",
pages = "367--373",
editor = "P.C. Chang and K. Shiojima and {Noel Buckley}, D. and S. Ahmed",
booktitle = "Proceedings - Electrochemical Society",

}

TY - GEN

T1 - In0.3Ga0.7As plate crystal growth for substrates by the TLZ method

AU - Kinoshita, K.

AU - Ogata, Y.

AU - Adachi, S.

AU - Natsuisaka, M.

AU - Ishikawa, T.

AU - Masaki, Tadahiko

AU - Yoda, S.

PY - 2005

Y1 - 2005

N2 - We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.

AB - We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.

UR - http://www.scopus.com/inward/record.url?scp=31944451092&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31944451092&partnerID=8YFLogxK

M3 - Conference contribution

VL - PV 2005-04

SP - 367

EP - 373

BT - Proceedings - Electrochemical Society

A2 - Chang, P.C.

A2 - Shiojima, K.

A2 - Noel Buckley, D.

A2 - Ahmed, S.

ER -