In0.3Ga0.7As plate crystal growth for substrates by the TLZ method

K. Kinoshita, Y. Ogata, S. Adachi, M. Natsuisaka, T. Ishikawa, T. Masaki, S. Yoda

Research output: Contribution to conferencePaper

Abstract

We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.

Original languageEnglish
Pages367-373
Number of pages7
Publication statusPublished - 2005 Dec 1
Event207th ECS Meeting - Quebec, Canada
Duration: 2005 May 162005 May 20

Conference

Conference207th ECS Meeting
CountryCanada
CityQuebec
Period05/5/1605/5/20

ASJC Scopus subject areas

  • Engineering(all)

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    Kinoshita, K., Ogata, Y., Adachi, S., Natsuisaka, M., Ishikawa, T., Masaki, T., & Yoda, S. (2005). In0.3Ga0.7As plate crystal growth for substrates by the TLZ method. 367-373. Paper presented at 207th ECS Meeting, Quebec, Canada.