In0.3Ga0.7As plate crystal growth for substrates by the TLZ method

K. Kinoshita; Y. Ogata; S. Adachi; M. Natsuisaka; T. Ishikawa; T. Masaki; S. Yoda

In_0.3Ga_0.7As plate crystal growth for substrates by the TLZ method

K. Kinoshita, Y. Ogata, S. Adachi, M. Natsuisaka, T. Ishikawa, T. Masaki, S. Yoda

Research output: Contribution to conference › Paper › peer-review

Abstract

We have succeeded in growing plate shaped In_0.3Ga _0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In_0.3Ca_0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.

Original language	English
Pages	367-373
Number of pages	7
Publication status	Published - 2005 Dec 1
Externally published	Yes
Event	207th ECS Meeting - Quebec, Canada Duration: 2005 May 16 → 2005 May 20

Conference

Conference	207th ECS Meeting
Country	Canada
City	Quebec
Period	05/5/16 → 05/5/20

ASJC Scopus subject areas

Engineering(all)

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title = "In0.3Ga0.7As plate crystal growth for substrates by the TLZ method",

abstract = "We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.",

author = "K. Kinoshita and Y. Ogata and S. Adachi and M. Natsuisaka and T. Ishikawa and T. Masaki and S. Yoda",

year = "2005",

month = dec,

day = "1",

language = "English",

pages = "367--373",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

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TY - CONF

T1 - In0.3Ga0.7As plate crystal growth for substrates by the TLZ method

AU - Kinoshita, K.

AU - Ogata, Y.

AU - Adachi, S.

AU - Natsuisaka, M.

AU - Ishikawa, T.

AU - Masaki, T.

AU - Yoda, S.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.

AB - We have succeeded in growing plate shaped In0.3Ga 0.7As single crystals for substrate use by the traveling liquidus zone (TLZ) method. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrates were difficult to be grown due to convection. Therefore, we attempted to grow plate shaped In0.3Ca0.7As crystals. Merits of plate crystals are suppression of convection in a melt during crystal growth by limiting the thickness of the plate and sufficient area for substrate use.

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M3 - Paper

AN - SCOPUS:31944451092

SP - 367

EP - 373

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

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