Abstract
A wideband on-chip dipole antenna for fully integrated pulse beam-forming purpose has been designed and fabricated. The antenna element in meandering shape is located in the top metal of a 1.8-V 5-metal-layer 0.18-μm CMOS chip. The antenna's bandwidth from S-parameter measurement is 4.4 GHz with operating frequency range from 7.4 GHz to 11.8 GHz. A CMOS integrated pulse generator with possibility of pulse delay adjustment is included to the antenna's terminals. The minimum delay resolution is 2.3 ps in post-layout simulation. The 1.1-mV peak-peak (p-p) received pulse voltage at 10-GHz resonant frequency is achieved by using a 20-dB standard horn antenna with 38-mm distance to the chip.
| Original language | English |
|---|---|
| Title of host publication | Asia-Pacific Microwave Conference Proceedings, APMC |
| Pages | 1561-1564 |
| Number of pages | 4 |
| Publication status | Published - 2010 |
| Externally published | Yes |
| Event | 2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama Duration: 2010 Dec 7 → 2010 Dec 10 |
Other
| Other | 2010 Asia-Pacific Microwave Conference, APMC 2010 |
|---|---|
| City | Yokohama |
| Period | 10/12/7 → 10/12/10 |
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Keywords
- beam-forming
- CMOS
- dipole
- integrated circuit
- On-chip antenna
- VLSI
- wideband
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Integrated wideband dipole antenna for pulse beam-formability by using 0.18-μm CMOS technology. / Khanh, Nguyen Ngoc Mai; Sasaki, Masahiro; Asada, Kunihiro.
Asia-Pacific Microwave Conference Proceedings, APMC. 2010. p. 1561-1564 5728182.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Integrated wideband dipole antenna for pulse beam-formability by using 0.18-μm CMOS technology
AU - Khanh, Nguyen Ngoc Mai
AU - Sasaki, Masahiro
AU - Asada, Kunihiro
PY - 2010
Y1 - 2010
N2 - A wideband on-chip dipole antenna for fully integrated pulse beam-forming purpose has been designed and fabricated. The antenna element in meandering shape is located in the top metal of a 1.8-V 5-metal-layer 0.18-μm CMOS chip. The antenna's bandwidth from S-parameter measurement is 4.4 GHz with operating frequency range from 7.4 GHz to 11.8 GHz. A CMOS integrated pulse generator with possibility of pulse delay adjustment is included to the antenna's terminals. The minimum delay resolution is 2.3 ps in post-layout simulation. The 1.1-mV peak-peak (p-p) received pulse voltage at 10-GHz resonant frequency is achieved by using a 20-dB standard horn antenna with 38-mm distance to the chip.
AB - A wideband on-chip dipole antenna for fully integrated pulse beam-forming purpose has been designed and fabricated. The antenna element in meandering shape is located in the top metal of a 1.8-V 5-metal-layer 0.18-μm CMOS chip. The antenna's bandwidth from S-parameter measurement is 4.4 GHz with operating frequency range from 7.4 GHz to 11.8 GHz. A CMOS integrated pulse generator with possibility of pulse delay adjustment is included to the antenna's terminals. The minimum delay resolution is 2.3 ps in post-layout simulation. The 1.1-mV peak-peak (p-p) received pulse voltage at 10-GHz resonant frequency is achieved by using a 20-dB standard horn antenna with 38-mm distance to the chip.
KW - beam-forming
KW - CMOS
KW - dipole
KW - integrated circuit
KW - On-chip antenna
KW - VLSI
KW - wideband
UR - http://www.scopus.com/inward/record.url?scp=79955714714&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955714714&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:79955714714
SN - 9784902339222
SP - 1561
EP - 1564
BT - Asia-Pacific Microwave Conference Proceedings, APMC
ER -