Abstract
A wideband on-chip dipole antenna for fully integrated pulse beam-forming purpose has been designed and fabricated. The antenna element in meandering shape is located in the top metal of a 1.8-V 5-metal-layer 0.18-μm CMOS chip. The antenna's bandwidth from S-parameter measurement is 4.4 GHz with operating frequency range from 7.4 GHz to 11.8 GHz. A CMOS integrated pulse generator with possibility of pulse delay adjustment is included to the antenna's terminals. The minimum delay resolution is 2.3 ps in post-layout simulation. The 1.1-mV peak-peak (p-p) received pulse voltage at 10-GHz resonant frequency is achieved by using a 20-dB standard horn antenna with 38-mm distance to the chip.
| Original language | English |
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| Title of host publication | 2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010 |
| Pages | 1561-1564 |
| Number of pages | 4 |
| Publication status | Published - 2010 Dec 1 |
| Event | 2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan Duration: 2010 Dec 7 → 2010 Dec 10 |
Publication series
| Name | Asia-Pacific Microwave Conference Proceedings, APMC |
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Conference
| Conference | 2010 Asia-Pacific Microwave Conference, APMC 2010 |
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| Country | Japan |
| City | Yokohama |
| Period | 10/12/7 → 10/12/10 |
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Keywords
- CMOS
- On-chip antenna
- VLSI
- beam-forming
- dipole
- integrated circuit
- wideband
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Khanh, N. N. M., Saski, M., & Asada, K. (2010). Integrated wideband dipole antenna for pulse beam-formability by using 0.18-μm CMOS technology. In 2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010 (pp. 1561-1564). [5728182] (Asia-Pacific Microwave Conference Proceedings, APMC).