Integration of terraced laser diode and garnet crystals by wafer direct bonding

Hideki Yokoi; Takashi Waniishi; Tetsuya Mizumoto; Masafumi Shimizu; Kazumasa Sakurai; Naoki Futakuchi; Yoshiaki Nakano

doi:10.1143/jjap.40.3463

Integration of terraced laser diode and garnet crystals by wafer direct bonding

Hideki Yokoi, Takashi Waniishi, Tetsuya Mizumoto, Masafumi Shimizu, Kazumasa Sakurai, Naoki Futakuchi, Yoshiaki Nakano

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH₄/H₂/O₂ gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.

Original language	English
Pages (from-to)	3463-3467
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.40.3463
Publication status	Published - 2001 May
Externally published	Yes

Keywords

Garnet crystals
InP
Laser diode
Optical isolator
Reactive ion etching
Wafer direct bonding

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.3463

Cite this

@article{d95e66fee834436eb5b4c601a2181e92,

title = "Integration of terraced laser diode and garnet crystals by wafer direct bonding",

abstract = "Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.",

keywords = "Garnet crystals, InP, Laser diode, Optical isolator, Reactive ion etching, Wafer direct bonding",

author = "Hideki Yokoi and Takashi Waniishi and Tetsuya Mizumoto and Masafumi Shimizu and Kazumasa Sakurai and Naoki Futakuchi and Yoshiaki Nakano",

year = "2001",

month = may,

doi = "10.1143/jjap.40.3463",

language = "English",

volume = "40",

pages = "3463--3467",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 A",

}

TY - JOUR

T1 - Integration of terraced laser diode and garnet crystals by wafer direct bonding

AU - Yokoi, Hideki

AU - Waniishi, Takashi

AU - Mizumoto, Tetsuya

AU - Shimizu, Masafumi

AU - Sakurai, Kazumasa

AU - Futakuchi, Naoki

AU - Nakano, Yoshiaki

PY - 2001/5

Y1 - 2001/5

N2 - Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.

AB - Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.

KW - Garnet crystals

KW - InP

KW - Laser diode

KW - Optical isolator

KW - Reactive ion etching

KW - Wafer direct bonding

UR - http://www.scopus.com/inward/record.url?scp=0035328745&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035328745&partnerID=8YFLogxK

U2 - 10.1143/jjap.40.3463

DO - 10.1143/jjap.40.3463

M3 - Article

AN - SCOPUS:0035328745

VL - 40

SP - 3463

EP - 3467

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 A

ER -

Integration of terraced laser diode and garnet crystals by wafer direct bonding

Abstract

Keywords

ASJC Scopus subject areas

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