Integration of terraced laser diode and garnet crystals by wafer direct bonding

Hideki Yokoi, Takashi Waniishi, Tetsuya Mizumoto, Masafumi Shimizu, Kazumasa Sakurai, Naoki Futakuchi, Yoshiaki Nakano

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.

Original languageEnglish
Pages (from-to)3463-3467
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number5 A
Publication statusPublished - 2001 May
Externally publishedYes

Fingerprint

Garnets
garnets
Semiconductor lasers
semiconductor lasers
wafers
Crystals
flat surfaces
crystals
Reactive ion etching
Pulsed lasers
pulsed lasers
etching
etchants
isolators
room temperature
Gases
gases
ions
Mirrors
flow velocity

Keywords

  • Garnet crystals
  • InP
  • Laser diode
  • Optical isolator
  • Reactive ion etching
  • Wafer direct bonding

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Integration of terraced laser diode and garnet crystals by wafer direct bonding. / Yokoi, Hideki; Waniishi, Takashi; Mizumoto, Tetsuya; Shimizu, Masafumi; Sakurai, Kazumasa; Futakuchi, Naoki; Nakano, Yoshiaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 5 A, 05.2001, p. 3463-3467.

Research output: Contribution to journalArticle

Yokoi, H, Waniishi, T, Mizumoto, T, Shimizu, M, Sakurai, K, Futakuchi, N & Nakano, Y 2001, 'Integration of terraced laser diode and garnet crystals by wafer direct bonding', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 5 A, pp. 3463-3467.
Yokoi, Hideki ; Waniishi, Takashi ; Mizumoto, Tetsuya ; Shimizu, Masafumi ; Sakurai, Kazumasa ; Futakuchi, Naoki ; Nakano, Yoshiaki. / Integration of terraced laser diode and garnet crystals by wafer direct bonding. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 ; Vol. 40, No. 5 A. pp. 3463-3467.
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AU - Futakuchi, Naoki

AU - Nakano, Yoshiaki

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