Abstract
Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.
| Original language | English |
|---|---|
| Pages (from-to) | 3463-3467 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 40 |
| Issue number | 5 A |
| Publication status | Published - 2001 May |
| Externally published | Yes |
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Keywords
- Garnet crystals
- InP
- Laser diode
- Optical isolator
- Reactive ion etching
- Wafer direct bonding
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Integration of terraced laser diode and garnet crystals by wafer direct bonding. / Yokoi, Hideki; Waniishi, Takashi; Mizumoto, Tetsuya; Shimizu, Masafumi; Sakurai, Kazumasa; Futakuchi, Naoki; Nakano, Yoshiaki.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 5 A, 05.2001, p. 3463-3467.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Integration of terraced laser diode and garnet crystals by wafer direct bonding
AU - Yokoi, Hideki
AU - Waniishi, Takashi
AU - Mizumoto, Tetsuya
AU - Shimizu, Masafumi
AU - Sakurai, Kazumasa
AU - Futakuchi, Naoki
AU - Nakano, Yoshiaki
PY - 2001/5
Y1 - 2001/5
N2 - Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.
AB - Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.
KW - Garnet crystals
KW - InP
KW - Laser diode
KW - Optical isolator
KW - Reactive ion etching
KW - Wafer direct bonding
UR - http://www.scopus.com/inward/record.url?scp=0035328745&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035328745&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0035328745
VL - 40
SP - 3463
EP - 3467
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 A
ER -