Integration of terraced laser diode and optical isolator by wafer direct bonding

Hideki Yokoi, Tetsuya Mizumoto

Research output: Contribution to conferencePaper

Abstract

Wafer direct bonding is a technique for integration of dissimilar materials without any adhesives. This technique is applied to the bonding between III-V compound semiconductors and garnet crystals, to integrate a laser diode and an optical isolator. The isolator is contacted with the terraced laser diode by wafer bonding and heat treatment in hydrogen ambience.

Original languageEnglish
Number of pages1
Publication statusPublished - 2000 Jan 1
Event2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France
Duration: 2000 Sep 102000 Sep 15

Other

Other2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
CityNice, France
Period00/9/1000/9/15

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Yokoi, H., & Mizumoto, T. (2000). Integration of terraced laser diode and optical isolator by wafer direct bonding. Paper presented at 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000), Nice, France, .