Abstract
Focused ion beam technology with light gas ions has recently gained attention with the commercial helium and neon ion beam systems. These ions are atomic, and thus, the beam/sample interaction is well understood. In the case of the nitrogen ion beam, several questions remain due to the molecular nature of the source gas, and in particular, if and when the molecular bond is split. Here, the authors report a cross-sectional scanning transmission electron microscopy (STEM) study of irradiated single crystalline silicon by various doses and energies of nitrogen ionized in a gas field ion source. The shape and dimensions of the subsurface damage is compared to Monte Carlo simulations and show very good agreement with atomic nitrogen with half the initial energy. Thus, it is shown that the nitrogen molecule is ionized as such and splits upon impact and proceeds as two independent atoms with half of the total beam energy. This observation is substantiated by molecular dynamics calculations. High resolution STEM images show that the interface between amorphous and crystalline silicon is well defined to few tens of nanometers.
| Original language | English |
|---|---|
| Article number | 03D101 |
| Journal | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
| Volume | 35 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2017 May 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Interaction study of nitrogen ion beam with silicon. / Schmidt, Marek E.; Zhang, Xiaobin; Oshima, Yoshifumi; Anh, Le The; Yasaka, Anto; Kanzaki, Teruhisa; Muruganathan, Manoharan; Akabori, Masashi; Shimoda, Tatsuya; Mizuta, Hiroshi.
In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 35, No. 3, 03D101, 01.05.2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Interaction study of nitrogen ion beam with silicon
AU - Schmidt, Marek E.
AU - Zhang, Xiaobin
AU - Oshima, Yoshifumi
AU - Anh, Le The
AU - Yasaka, Anto
AU - Kanzaki, Teruhisa
AU - Muruganathan, Manoharan
AU - Akabori, Masashi
AU - Shimoda, Tatsuya
AU - Mizuta, Hiroshi
PY - 2017/5/1
Y1 - 2017/5/1
N2 - Focused ion beam technology with light gas ions has recently gained attention with the commercial helium and neon ion beam systems. These ions are atomic, and thus, the beam/sample interaction is well understood. In the case of the nitrogen ion beam, several questions remain due to the molecular nature of the source gas, and in particular, if and when the molecular bond is split. Here, the authors report a cross-sectional scanning transmission electron microscopy (STEM) study of irradiated single crystalline silicon by various doses and energies of nitrogen ionized in a gas field ion source. The shape and dimensions of the subsurface damage is compared to Monte Carlo simulations and show very good agreement with atomic nitrogen with half the initial energy. Thus, it is shown that the nitrogen molecule is ionized as such and splits upon impact and proceeds as two independent atoms with half of the total beam energy. This observation is substantiated by molecular dynamics calculations. High resolution STEM images show that the interface between amorphous and crystalline silicon is well defined to few tens of nanometers.
AB - Focused ion beam technology with light gas ions has recently gained attention with the commercial helium and neon ion beam systems. These ions are atomic, and thus, the beam/sample interaction is well understood. In the case of the nitrogen ion beam, several questions remain due to the molecular nature of the source gas, and in particular, if and when the molecular bond is split. Here, the authors report a cross-sectional scanning transmission electron microscopy (STEM) study of irradiated single crystalline silicon by various doses and energies of nitrogen ionized in a gas field ion source. The shape and dimensions of the subsurface damage is compared to Monte Carlo simulations and show very good agreement with atomic nitrogen with half the initial energy. Thus, it is shown that the nitrogen molecule is ionized as such and splits upon impact and proceeds as two independent atoms with half of the total beam energy. This observation is substantiated by molecular dynamics calculations. High resolution STEM images show that the interface between amorphous and crystalline silicon is well defined to few tens of nanometers.
UR - http://www.scopus.com/inward/record.url?scp=85013965710&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85013965710&partnerID=8YFLogxK
U2 - 10.1116/1.4977566
DO - 10.1116/1.4977566
M3 - Article
VL - 35
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SN - 2166-2746
IS - 3
M1 - 03D101
ER -