Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing

H. Shimizu, M. Sasagawa, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)486-487
JournalExtended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2003 Sep 1

Cite this

Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing. / Shimizu, H.; Sasagawa, M.; Kita, K.; Kyuno, K.; Toriumi, A.

In: Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), 01.09.2003, p. 486-487.

Research output: Contribution to journalArticle

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