| Original language | English |
|---|---|
| Pages (from-to) | 486-487 |
| Journal | Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM) |
| Publication status | Published - 2003 Sep 1 |
Cite this
Shimizu, H., Sasagawa, M., Kita, K., Kyuno, K., & Toriumi, A. (2003). Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing. Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), 486-487.
Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing. / Shimizu, H.; Sasagawa, M.; Kita, K.; Kyuno, K.; Toriumi, A.
In: Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), 01.09.2003, p. 486-487.Research output: Contribution to journal › Article
Shimizu, H, Sasagawa, M, Kita, K, Kyuno, K & Toriumi, A 2003, 'Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing', Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), pp. 486-487.
Shimizu H, Sasagawa M, Kita K, Kyuno K, Toriumi A. Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing. Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM). 2003 Sep 1;486-487.
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title = "Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing",
author = "H. Shimizu and M. Sasagawa and K. Kita and K. Kyuno and A. Toriumi",
year = "2003",
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language = "English",
pages = "486--487",
journal = "Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)",
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AU - Shimizu, H.
AU - Sasagawa, M.
AU - Kita, K.
AU - Kyuno, K.
AU - Toriumi, A.
PY - 2003/9/1
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JO - Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
JF - Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
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