TY - JOUR
T1 - Investigation of Piezoelectricity and Curie Temperature of Pb(Mg1/3, Nb2/3)O3-PbTiO3 Epitaxial Thin Film on Si Prepared by Sputter Deposition with Fast Cooling
AU - Yoshida, Shinya
AU - Morimura, Takumi
AU - Wasa, Kiyotaka
AU - Tanaka, Shuji
N1 - Funding Information:
Manuscript received February 20, 2018; accepted June 11, 2018. Date of publication June 14, 2018; date of current version August 29, 2018. This work was supported in part by JSPS KAKENHI under Grant 16K17500 and in part by the Asahi Glass Foundation. (Corresponding author: Shinya Yoshida.) S. Yoshida, T. Morimura, and S. Tanaka are with the Division of Mechanical Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan (e-mail: s-yoshida. . ems.mech.tohoku.ac.jp).
Publisher Copyright:
© 1986-2012 IEEE.
PY - 2018/9
Y1 - 2018/9
N2 - This paper reports on an abnormally high Curie temperature (Tc) of a Pb(Mg1/3, Nb2/3)O3-PbTiO3 (PMN-PT) epitaxial thin film on Si prepared by sputter deposition with fast cooling. This deposition method was previously applied to Pb(Mn, Nb)O3-Pb(Zr, Ti)O3, and a c-axis-oriented epitaxial film with high Tc was obtained. Using the same method, a crack-free 2- μ m -thick PMN-PT thin film was epitaxially grown on a Si substrate covered with buffer layers. The piezoelectricity, |e31,f|, was as large as 1819 C/m2 under an electric field ranging from 25 to 75 kV/cm. The temperature characteristics of the dielectric constant and crystalline structure were significantly different from those of a bulk single crystal of PMN-PT, and suggested Tc higher than 500 °C. The enhanced Tc was possibly caused by thermally induced compressive strain received from the Si substrate. This approach can be an effective method for breaking the well-known tradeoff relationship between piezoelectricity and Tc of a piezoelectric thin film.
AB - This paper reports on an abnormally high Curie temperature (Tc) of a Pb(Mg1/3, Nb2/3)O3-PbTiO3 (PMN-PT) epitaxial thin film on Si prepared by sputter deposition with fast cooling. This deposition method was previously applied to Pb(Mn, Nb)O3-Pb(Zr, Ti)O3, and a c-axis-oriented epitaxial film with high Tc was obtained. Using the same method, a crack-free 2- μ m -thick PMN-PT thin film was epitaxially grown on a Si substrate covered with buffer layers. The piezoelectricity, |e31,f|, was as large as 1819 C/m2 under an electric field ranging from 25 to 75 kV/cm. The temperature characteristics of the dielectric constant and crystalline structure were significantly different from those of a bulk single crystal of PMN-PT, and suggested Tc higher than 500 °C. The enhanced Tc was possibly caused by thermally induced compressive strain received from the Si substrate. This approach can be an effective method for breaking the well-known tradeoff relationship between piezoelectricity and Tc of a piezoelectric thin film.
KW - Curie temperature
KW - ferroelectric films
KW - microelectromechanical systems (MEMSs)
KW - Pb(Mg, Nb)O-PbTiO
KW - piezoelectric film
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U2 - 10.1109/TUFFC.2018.2847423
DO - 10.1109/TUFFC.2018.2847423
M3 - Article
C2 - 29994255
AN - SCOPUS:85048522194
SN - 0885-3010
VL - 65
SP - 1695
EP - 1702
JO - Transactions of the IRE Professional Group on Ultrasonic Engineering
JF - Transactions of the IRE Professional Group on Ultrasonic Engineering
IS - 9
M1 - 8385124
ER -