Investigation on grown-in defects in CZ-Si crystal under slow pulling rate

Jun Furukawa, Hideo Tanaka, Yuji Nakada, Naoki Ono, Hiroyuki Shiraki

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The formation process of a dislocation cluster outside the oxidation-induced stacking fault (OSF) -ring region during Czochralski (CZ) silicon crystal growth was investigated using a quenching and in situ annealing technique. Dislocation clusters were determined to be interstitial type from inside-outside contrast analysis of the transmission electron microscope (TEM) image. From the quenching experiment, the clustering temperature of dislocations which were formed by supersaturated self-interstitials and/or small dislocation loops was found to be about 1000 °C during growth. Furthermore, the characteristic axitial distribution of dislocation size was observed in the halted crystal. This could be explained by the change in concentration of supersaturated self-interstitials and the clustering of dislocations due to the enhancement of diffusion of point defects.

Original languageEnglish
Pages (from-to)26-30
Number of pages5
JournalJournal of Crystal Growth
Volume210
Issue number1
DOIs
Publication statusPublished - 2000 Mar 1
Externally publishedYes

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pulling
Dislocations (crystals)
Defects
Crystals
Quenching
defects
crystals
interstitials
Stacking faults
Silicon
Point defects
Crystallization
Crystal growth
Electron microscopes
quenching
Annealing
Oxidation
crystal defects
point defects
crystal growth

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Investigation on grown-in defects in CZ-Si crystal under slow pulling rate. / Furukawa, Jun; Tanaka, Hideo; Nakada, Yuji; Ono, Naoki; Shiraki, Hiroyuki.

In: Journal of Crystal Growth, Vol. 210, No. 1, 01.03.2000, p. 26-30.

Research output: Contribution to journalArticle

Furukawa, Jun ; Tanaka, Hideo ; Nakada, Yuji ; Ono, Naoki ; Shiraki, Hiroyuki. / Investigation on grown-in defects in CZ-Si crystal under slow pulling rate. In: Journal of Crystal Growth. 2000 ; Vol. 210, No. 1. pp. 26-30.
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