Investigation on SnS film by RF sputtering for photovoltaic application

Wei Guang-Pu, Zhang Zhi-Lin, Zhao Wei-Ming, Gao Xiang-Hong, Chen Wei-Qun, Hiromasa Tanamura, Masaki Yamaguchi, Hidenori Noguchi, Takao Nagatomo, Osamu Omoto

Research output: Contribution to journalConference article

28 Citations (Scopus)

Abstract

Tin sulfide (SnS) films were prepared by RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), the n-type SnS films were obtained.

Original languageEnglish
Pages (from-to)365-368
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Volume1
Publication statusPublished - 1994 Dec 1
EventProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA
Duration: 1994 Dec 51994 Dec 9

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Guang-Pu, W., Zhi-Lin, Z., Wei-Ming, Z., Xiang-Hong, G., Wei-Qun, C., Tanamura, H., Yamaguchi, M., Noguchi, H., Nagatomo, T., & Omoto, O. (1994). Investigation on SnS film by RF sputtering for photovoltaic application. Conference Record of the IEEE Photovoltaic Specialists Conference, 1, 365-368.