Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

177 Citations (Scopus)
Original languageEnglish
Pages (from-to)809-811
JournalDefault journal
Volume73
Publication statusPublished - 1998 Aug 1

Cite this

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density. / Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.; Umeno, M.

In: Default journal, Vol. 73, 01.08.1998, p. 809-811.

Research output: Contribution to journalArticle

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