Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

S. Arulkumaran; T. Egawa; Hiroyasu Ishikawa; T. Jimbo; M. Umeno

doi:10.1063/1.122009

Investigations of SiO₂/n-GaN and Si₃N₄/n-GaN insulator-semiconductor interfaces with low interface state density

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article

177 Citations (Scopus)

Abstract

The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO₂)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO₂/n-GaN, and PECVD silicon nitride (Si₃N₄)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO₂ and Si₃N₄) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO₂ and PECVD grown Si₃N₄ layers. Minimum interface state density (2.5×10¹¹eV^-1cm^-2) has been observed in the PECVD grown SiO₂/n-GaN interface when it was compared with EB evaporated SiO₂/n-GaN interface (5.3×10¹¹eV^-1cm^-2) and PECVD Si₃N₄/n-GaN interface (6.5×10¹¹eV^-1cm^-2). The interface state density (N_f) depends on the composition of deposited insulating layers.

Original language	English
Pages (from-to)	809-811
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	6
DOIs	https://doi.org/10.1063/1.122009
Publication status	Published - 1998
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T., & Umeno, M. (1998). Investigations of SiO₂/n-GaN and Si₃N₄/n-GaN insulator-semiconductor interfaces with low interface state density. Applied Physics Letters, 73(6), 809-811. https://doi.org/10.1063/1.122009

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title = "Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density",

abstract = "The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers.",

author = "S. Arulkumaran and T. Egawa and Hiroyasu Ishikawa and T. Jimbo and M. Umeno",

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AU - Ishikawa, Hiroyasu

AU - Jimbo, T.

AU - Umeno, M.

PY - 1998

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N2 - The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers.

AB - The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers.

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10.1063/1.122009