Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa, T. Jimbo, M. Umeno

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Abstract

The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers.

Original languageEnglish
Pages (from-to)809-811
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number6
DOIs
Publication statusPublished - 1998
Externally publishedYes

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insulators
vapors
electron beams
MIS (semiconductors)
silicon nitrides
electrical measurement
x ray spectroscopy
metalorganic chemical vapor deposition
capacitance
electrical properties
photoelectron spectroscopy
silicon dioxide

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density. / Arulkumaran, S.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.; Umeno, M.

In: Applied Physics Letters, Vol. 73, No. 6, 1998, p. 809-811.

Research output: Contribution to journalArticle

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AU - Arulkumaran, S.

AU - Egawa, T.

AU - Ishikawa, Hiroyasu

AU - Jimbo, T.

AU - Umeno, M.

PY - 1998

Y1 - 1998

N2 - The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers.

AB - The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers.

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