Abstract
The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers.
| Original language | English |
|---|---|
| Pages (from-to) | 809-811 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 73 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1998 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density. / Arulkumaran, S.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.; Umeno, M.
In: Applied Physics Letters, Vol. 73, No. 6, 1998, p. 809-811.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density
AU - Arulkumaran, S.
AU - Egawa, T.
AU - Ishikawa, Hiroyasu
AU - Jimbo, T.
AU - Umeno, M.
PY - 1998
Y1 - 1998
N2 - The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers.
AB - The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance-voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011eV-1cm-2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011eV-1cm-2) and PECVD Si3N4/n-GaN interface (6.5×1011eV-1cm-2). The interface state density (Nf) depends on the composition of deposited insulating layers.
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U2 - 10.1063/1.122009
DO - 10.1063/1.122009
M3 - Article
AN - SCOPUS:21944449679
VL - 73
SP - 809
EP - 811
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
ER -