Investigations on strained AlGaN/GaN/Sapphire and GalnN multi-quantum-well surface LEDs using AlGaN/GaN bragg reflectors

Hiroyasu Ishikawa, Naoyuki Nakada, Masaharu Nakaji, Guang Yuan Zhao, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Investigations were carried out on metalorganicchemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower A1N molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high A1N molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high A1N molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GalnN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GalnN MQW LED when compared with non-DBR based MQW structures.

Original languageEnglish
Pages (from-to)591-596
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE83-C
Issue number4
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Bragg reflectors
Distributed Bragg reflectors
Aluminum Oxide
Sapphire
Semiconductor quantum wells
Light emitting diodes
Cracks
Vapor deposition
Tensile stress
Diodes
X rays
aluminum gallium nitride

Keywords

  • Algan
  • Distributed bragg reflector (dbr)
  • Galnn
  • Gan
  • Light emitting diode (led)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Investigations on strained AlGaN/GaN/Sapphire and GalnN multi-quantum-well surface LEDs using AlGaN/GaN bragg reflectors. / Ishikawa, Hiroyasu; Nakada, Naoyuki; Nakaji, Masaharu; Zhao, Guang Yuan; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: IEICE Transactions on Electronics, Vol. E83-C, No. 4, 2000, p. 591-596.

Research output: Contribution to journalArticle

Ishikawa, Hiroyasu ; Nakada, Naoyuki ; Nakaji, Masaharu ; Zhao, Guang Yuan ; Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi. / Investigations on strained AlGaN/GaN/Sapphire and GalnN multi-quantum-well surface LEDs using AlGaN/GaN bragg reflectors. In: IEICE Transactions on Electronics. 2000 ; Vol. E83-C, No. 4. pp. 591-596.
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abstract = "Investigations were carried out on metalorganicchemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower A1N molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high A1N molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high A1N molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GalnN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75{\%} at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GalnN MQW LED when compared with non-DBR based MQW structures.",
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AU - Nakada, Naoyuki

AU - Nakaji, Masaharu

AU - Zhao, Guang Yuan

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

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AB - Investigations were carried out on metalorganicchemical-vapor-deposition (MOCVD)-grown strained AlGaN/ GaN/sapphire structures using X-ray diffratometry. While AlGaN with lower A1N molar fraction (< 0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high A1N molar fraction (> 0.1). Though tensile stress caused the cracks in AlGaN layer with high A1N molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GalnN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GalnN MQW LED when compared with non-DBR based MQW structures.

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