K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology

K. Nishikawa, I. Toyoda, K. Kamogawa, T. Tokumitsu, C. Yamaguchi, M. Hirano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The Si monolithic microwave integrated circuits (MMIC) with high-performance Si devices or on-chip inductors are limited to the X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMICs uses 3D Masterslice MMIC technology that provides a separation between passive circuits and the low-resistivity Si substrate that results in low-loss transmission lines with loss competitive with that of coplanar waveguides formed on a GaAs substrate. The Masterslice Si MMIC that is the same as those demonstrated using the GaAs substrate reduces turn-around-time (TAT) and fabrication cost.

Original languageEnglish
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Editors Anon
PublisherIEEE
Pages252-253, 445
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA
Duration: 1998 Feb 51998 Feb 7

Other

OtherProceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC
CitySan Francisco, CA, USA
Period98/2/598/2/7

Fingerprint

Monolithic microwave integrated circuits
Substrates
Passive networks
Turnaround time
Coplanar waveguides
Electric lines
Fabrication
Silicon
Costs

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Nishikawa, K., Toyoda, I., Kamogawa, K., Tokumitsu, T., Yamaguchi, C., & Hirano, M. (1998). K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology. In Anon (Ed.), Digest of Technical Papers - IEEE International Solid-State Circuits Conference (pp. 252-253, 445). IEEE.

K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology. / Nishikawa, K.; Toyoda, I.; Kamogawa, K.; Tokumitsu, T.; Yamaguchi, C.; Hirano, M.

Digest of Technical Papers - IEEE International Solid-State Circuits Conference. ed. / Anon. IEEE, 1998. p. 252-253, 445.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishikawa, K, Toyoda, I, Kamogawa, K, Tokumitsu, T, Yamaguchi, C & Hirano, M 1998, K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology. in Anon (ed.), Digest of Technical Papers - IEEE International Solid-State Circuits Conference. IEEE, pp. 252-253, 445, Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC, San Francisco, CA, USA, 98/2/5.
Nishikawa K, Toyoda I, Kamogawa K, Tokumitsu T, Yamaguchi C, Hirano M. K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology. In Anon, editor, Digest of Technical Papers - IEEE International Solid-State Circuits Conference. IEEE. 1998. p. 252-253, 445
Nishikawa, K. ; Toyoda, I. ; Kamogawa, K. ; Tokumitsu, T. ; Yamaguchi, C. ; Hirano, M. / K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. editor / Anon. IEEE, 1998. pp. 252-253, 445
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