Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing

H.Shimizu H.Shimizu, K.Kita K.Kita, K.Kyuno K.Kyuno, A.Toriumi A.Toriumi, Kentaro Kyuno

Research output: Contribution to journalArticle

27 Citations (Scopus)
Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume44
Publication statusPublished - 2005 Apr 1

Cite this

Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing. / H.Shimizu, H.Shimizu; K.Kita, K.Kita; K.Kyuno, K.Kyuno; A.Toriumi, A.Toriumi; Kyuno, Kentaro.

In: Japanese Journal of Applied Physics, Vol. 44, 01.04.2005.

Research output: Contribution to journalArticle

H.Shimizu, H.Shimizu ; K.Kita, K.Kita ; K.Kyuno, K.Kyuno ; A.Toriumi, A.Toriumi ; Kyuno, Kentaro. / Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing. In: Japanese Journal of Applied Physics. 2005 ; Vol. 44.
@article{1a137dc293af482c93dd88812ddd5f59,
title = "Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing",
author = "H.Shimizu H.Shimizu and K.Kita K.Kita and K.Kyuno K.Kyuno and A.Toriumi A.Toriumi and Kentaro Kyuno",
year = "2005",
month = "4",
day = "1",
language = "English",
volume = "44",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing

AU - H.Shimizu, H.Shimizu

AU - K.Kita, K.Kita

AU - K.Kyuno, K.Kyuno

AU - A.Toriumi, A.Toriumi

AU - Kyuno, Kentaro

PY - 2005/4/1

Y1 - 2005/4/1

M3 - Article

VL - 44

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

ER -