Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3

Toshiki Sakai, Hajime Kiyono, Shiro Shimada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages235-240
Number of pages6
Volume1202
Publication statusPublished - 2010
Externally publishedYes
Event2009 MRS Fall Meeting - Boston, MA
Duration: 2009 Nov 302009 Dec 4

Other

Other2009 MRS Fall Meeting
CityBoston, MA
Period09/11/3009/12/4

Fingerprint

Nitridation
deposits
Thermogravimetric analysis
Kinetics
kinetics
Deposits
decomposition
atmospheres
diffraction
X ray powder diffraction
x rays
Decomposition

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Sakai, T., Kiyono, H., & Shimada, S. (2010). Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3 In Materials Research Society Symposium Proceedings (Vol. 1202, pp. 235-240)

Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3 . / Sakai, Toshiki; Kiyono, Hajime; Shimada, Shiro.

Materials Research Society Symposium Proceedings. Vol. 1202 2010. p. 235-240.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakai, T, Kiyono, H & Shimada, S 2010, Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3 in Materials Research Society Symposium Proceedings. vol. 1202, pp. 235-240, 2009 MRS Fall Meeting, Boston, MA, 09/11/30.
Sakai T, Kiyono H, Shimada S. Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3 In Materials Research Society Symposium Proceedings. Vol. 1202. 2010. p. 235-240
Sakai, Toshiki ; Kiyono, Hajime ; Shimada, Shiro. / Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3 Materials Research Society Symposium Proceedings. Vol. 1202 2010. pp. 235-240
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