Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3

Toshiki Sakai, Hajime Kiyono, Shiro Shimada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nitridation of β-Ga2O3 to GaN in an atmosphere of NH3/Ar was investigated from the view points of kinetic results by thermogravimetric analysis (TGA) and microstructural observation. TGA and X-ray powder diffraction results showed that the nitridation of Ga2O 3 to GaN starts at about 650°C and decomposition of GaN formed occurs from 870°C. Isothermal TGA results showed that the nitridation proceeds linearly with time at 800 - 1000°C. Microstructural observation of the samples nitrided at 800°C showed that fine GaN particles (≃50 nm size) deposit on surfaces of Ga2O3 particles at an early stage, and the deposits grow with progress of the nitridation.

Original languageEnglish
Title of host publicationIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Pages235-240
Number of pages6
Publication statusPublished - 2010 Jul 7
Externally publishedYes
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: 2009 Nov 302009 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1202
ISSN (Print)0272-9172

Conference

Conference2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period09/11/3009/12/4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Kinetics and mechanism of formation of GaN from β-Ga<sub>2</sub>O <sub>3</sub> by NH<sub>3</sub>'. Together they form a unique fingerprint.

  • Cite this

    Sakai, T., Kiyono, H., & Shimada, S. (2010). Kinetics and mechanism of formation of GaN from β-Ga2O 3 by NH3. In III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions (pp. 235-240). (Materials Research Society Symposium Proceedings; Vol. 1202).