Laser-induced damage threshold and laser processing of GaN

Hong Bo Sun, Saulius Juodkazis, P. G. Eliseev, T. Sugahara, Tao Wang, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages311-322
Number of pages12
Volume3885
Publication statusPublished - 2000
Externally publishedYes
EventHigh-Power Laser Ablation II - Osaka, Jpn
Duration: 1999 Nov 11999 Nov 5

Other

OtherHigh-Power Laser Ablation II
CityOsaka, Jpn
Period99/11/199/11/5

Fingerprint

Laser damage
yield point
Lasers
Laser pulses
Processing
lasers
Optical constants
shot
thresholds
Nitrides
pulses
Lenses
Optical properties
Irradiation
Wavelength
magnification
nitrides
lenses
optical properties
irradiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Sun, H. B., Juodkazis, S., Eliseev, P. G., Sugahara, T., Wang, T., Matsuo, S., ... Misawa, H. (2000). Laser-induced damage threshold and laser processing of GaN. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3885, pp. 311-322). Society of Photo-Optical Instrumentation Engineers.

Laser-induced damage threshold and laser processing of GaN. / Sun, Hong Bo; Juodkazis, Saulius; Eliseev, P. G.; Sugahara, T.; Wang, Tao; Matsuo, Shigeki; Sakai, Shiro; Misawa, Hiroaki.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3885 Society of Photo-Optical Instrumentation Engineers, 2000. p. 311-322.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sun, HB, Juodkazis, S, Eliseev, PG, Sugahara, T, Wang, T, Matsuo, S, Sakai, S & Misawa, H 2000, Laser-induced damage threshold and laser processing of GaN. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3885, Society of Photo-Optical Instrumentation Engineers, pp. 311-322, High-Power Laser Ablation II, Osaka, Jpn, 99/11/1.
Sun HB, Juodkazis S, Eliseev PG, Sugahara T, Wang T, Matsuo S et al. Laser-induced damage threshold and laser processing of GaN. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3885. Society of Photo-Optical Instrumentation Engineers. 2000. p. 311-322
Sun, Hong Bo ; Juodkazis, Saulius ; Eliseev, P. G. ; Sugahara, T. ; Wang, Tao ; Matsuo, Shigeki ; Sakai, Shiro ; Misawa, Hiroaki. / Laser-induced damage threshold and laser processing of GaN. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3885 Society of Photo-Optical Instrumentation Engineers, 2000. pp. 311-322
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