Laser-induced damage threshold and laser processing of GaN

Hong Bo Sun, Saulius Juodkazis, P. G. Eliseev, T. Sugahara, Tao Wang, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.

Original languageEnglish
Pages (from-to)311-322
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3885
DOIs
Publication statusPublished - 2000
Externally publishedYes
EventHigh-Power Laser Ablation II - Osaka, Jpn
Duration: 1999 Nov 11999 Nov 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Sun, H. B., Juodkazis, S., Eliseev, P. G., Sugahara, T., Wang, T., Matsuo, S., Sakai, S., & Misawa, H. (2000). Laser-induced damage threshold and laser processing of GaN. Proceedings of SPIE - The International Society for Optical Engineering, 3885, 311-322. https://doi.org/10.1117/12.376976