Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser

M. Fujimaki, K. Yagi, Y. Ohki, H. Nishikawa, K. Awazu

Research output: Contribution to journalArticle

28 Citations (Scopus)
Original languageEnglish
Pages (from-to)9859-9862
JournalPhysical Review B,
Volume53
Publication statusPublished - 1996 Apr 1

Cite this

Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser. / Fujimaki, M.; Yagi, K.; Ohki, Y.; Nishikawa, H.; Awazu, K.

In: Physical Review B, Vol. 53, 01.04.1996, p. 9859-9862.

Research output: Contribution to journalArticle

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