Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content

M. Kawaguchi, T. Miyamoto, S. Kawakami, S. Minobe, Atsushi Saitoh, F. Koyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages496
Number of pages1
Volume2
ISBN (Electronic)0780377664
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan, Province of China
Duration: 2003 Dec 152003 Dec 19

Other

Other5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
CountryTaiwan, Province of China
CityTaipei
Period03/12/1503/12/19

Fingerprint

lasing
thresholds
Lasers
barrier layers
lasers
Wavelength
wavelengths
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kawaguchi, M., Miyamoto, T., Kawakami, S., Minobe, S., Saitoh, A., & Koyama, F. (2003). Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. In CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings (Vol. 2, pp. 496). [1277044] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2003.1277044

Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. / Kawaguchi, M.; Miyamoto, T.; Kawakami, S.; Minobe, S.; Saitoh, Atsushi; Koyama, F.

CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Vol. 2 Institute of Electrical and Electronics Engineers Inc., 2003. p. 496 1277044.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kawaguchi, M, Miyamoto, T, Kawakami, S, Minobe, S, Saitoh, A & Koyama, F 2003, Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. in CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. vol. 2, 1277044, Institute of Electrical and Electronics Engineers Inc., pp. 496, 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003, Taipei, Taiwan, Province of China, 03/12/15. https://doi.org/10.1109/CLEOPR.2003.1277044
Kawaguchi M, Miyamoto T, Kawakami S, Minobe S, Saitoh A, Koyama F. Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. In CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Vol. 2. Institute of Electrical and Electronics Engineers Inc. 2003. p. 496. 1277044 https://doi.org/10.1109/CLEOPR.2003.1277044
Kawaguchi, M. ; Miyamoto, T. ; Kawakami, S. ; Minobe, S. ; Saitoh, Atsushi ; Koyama, F. / Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Vol. 2 Institute of Electrical and Electronics Engineers Inc., 2003. pp. 496
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