Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content

M. Kawaguchi, T. Miyamoto, S. Kawakami, S. Minobe, Atsushi Saitoh, F. Koyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages496
Number of pages1
Volume2
ISBN (Electronic)0780377664
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan, Province of China
Duration: 2003 Dec 152003 Dec 19

Other

Other5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
CountryTaiwan, Province of China
CityTaipei
Period03/12/1503/12/19

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Kawaguchi, M., Miyamoto, T., Kawakami, S., Minobe, S., Saitoh, A., & Koyama, F. (2003). Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. In CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings (Vol. 2, pp. 496). [1277044] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2003.1277044