Lateral and vertical scaling of high-f max InP-based HBTs

Shinichi Tanaka, Yoshifumi Ikenaga, Akira Fujihara

Research output: Contribution to journalArticle

Abstract

Design approach to improving f max of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving f T) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on f max. The model was compared with measurements of single and double heterojunction bipolar transistors with different f T and various emitter sizes. While a high f max of 313 GHz was achieved using submicron HBT with high f T, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.

Original languageEnglish
Pages (from-to)924-928
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE87-C
Issue number6
Publication statusPublished - 2004 Jun
Externally publishedYes

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Heterojunction bipolar transistors

Keywords

  • HBT
  • Indium phosphide (InP)
  • Maximum frequency of oscillation
  • Scaling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lateral and vertical scaling of high-f max InP-based HBTs. / Tanaka, Shinichi; Ikenaga, Yoshifumi; Fujihara, Akira.

In: IEICE Transactions on Electronics, Vol. E87-C, No. 6, 06.2004, p. 924-928.

Research output: Contribution to journalArticle

Tanaka, S, Ikenaga, Y & Fujihara, A 2004, 'Lateral and vertical scaling of high-f max InP-based HBTs', IEICE Transactions on Electronics, vol. E87-C, no. 6, pp. 924-928.
Tanaka, Shinichi ; Ikenaga, Yoshifumi ; Fujihara, Akira. / Lateral and vertical scaling of high-f max InP-based HBTs. In: IEICE Transactions on Electronics. 2004 ; Vol. E87-C, No. 6. pp. 924-928.
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