Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET

Kimiyoshi Usami, Shunsuke Kogure, Yusuke Yoshida, Ryo Magasaki, Hideharu Amano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper proposes a level-shifter free (LSF) approach for multi-VDD design to employ a combination of body bias control and a superior threshold-voltage (Vt) modulation capability of SOTB (Silicon on Thin BOX) devices. We applied this approach to a microprocessor test chip with low-voltage (VDDL) and high-voltage (VDDH) domains, and fabricated it in a 65nm SOTB technology. Measurement results demonstrated that the chip correctly operates at VDDL=0.6V and VDDH=1.2V under the reverse-body-bias (RBB) of 2V for pMOS transistors in the VDDH domain while suppressing the static dc current.

Original languageEnglish
Title of host publication2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
Volume2018-March
ISBN (Electronic)9781538637654
DOIs
Publication statusPublished - 2018 Mar 7
Event2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 - Burlingame, United States
Duration: 2017 Oct 162017 Oct 18

Other

Other2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
CountryUnited States
CityBurlingame
Period17/10/1617/10/18

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Keywords

  • body bias control
  • level shifter
  • multi-VDD
  • SOTB

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Usami, K., Kogure, S., Yoshida, Y., Magasaki, R., & Amano, H. (2018). Level-shifter free approach for multi-Vdd SOTB employing adaptive Vt modulation for pMOSFET. In 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 (Vol. 2018-March, pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2017.8309226