Localization and energy transfer of quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures

Research output: Contribution to journalArticle

187 Citations (Scopus)

Abstract

A theory of energy transfer of the quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures is developed, and the recently observed slow and nonexponential energy relaxation of excitons is explained quantitatively in terms of the one-phonon-assisted transfer of localized excitons among islandlike structures within a quantum well. The nonexponential behavior of energy relaxation is clarified as a general feature to be observed in the low-energy tail of the density of states. The dependence of the energy relaxation rate on the quantum-well thickness is discussed along with the same dependence of the absorption bandwidth. The correlation between the energy relaxation rate and the absorption bandwidth is explained qualitatively on the basis of the scaling property of the rate equation for the exciton distribution function.

Original languageEnglish
Pages (from-to)6552-6573
Number of pages22
JournalPhysical Review B
Volume31
Issue number10
DOIs
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

Excitons
Energy transfer
Semiconductor quantum wells
Heterojunctions
energy transfer
excitons
quantum wells
Bandwidth
energy
bandwidth
Distribution functions
distribution functions
LDS 751
gallium arsenide
scaling

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Localization and energy transfer of quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures. / Takagahara, Toshihide.

In: Physical Review B, Vol. 31, No. 10, 1985, p. 6552-6573.

Research output: Contribution to journalArticle

@article{d502d5ea46a2409f90bd1b9c7adb0985,
title = "Localization and energy transfer of quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures",
abstract = "A theory of energy transfer of the quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures is developed, and the recently observed slow and nonexponential energy relaxation of excitons is explained quantitatively in terms of the one-phonon-assisted transfer of localized excitons among islandlike structures within a quantum well. The nonexponential behavior of energy relaxation is clarified as a general feature to be observed in the low-energy tail of the density of states. The dependence of the energy relaxation rate on the quantum-well thickness is discussed along with the same dependence of the absorption bandwidth. The correlation between the energy relaxation rate and the absorption bandwidth is explained qualitatively on the basis of the scaling property of the rate equation for the exciton distribution function.",
author = "Toshihide Takagahara",
year = "1985",
doi = "10.1103/PhysRevB.31.6552",
language = "English",
volume = "31",
pages = "6552--6573",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Localization and energy transfer of quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures

AU - Takagahara, Toshihide

PY - 1985

Y1 - 1985

N2 - A theory of energy transfer of the quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures is developed, and the recently observed slow and nonexponential energy relaxation of excitons is explained quantitatively in terms of the one-phonon-assisted transfer of localized excitons among islandlike structures within a quantum well. The nonexponential behavior of energy relaxation is clarified as a general feature to be observed in the low-energy tail of the density of states. The dependence of the energy relaxation rate on the quantum-well thickness is discussed along with the same dependence of the absorption bandwidth. The correlation between the energy relaxation rate and the absorption bandwidth is explained qualitatively on the basis of the scaling property of the rate equation for the exciton distribution function.

AB - A theory of energy transfer of the quasi-two-dimensional excitons in GaAs-AlAs quantum-well heterostructures is developed, and the recently observed slow and nonexponential energy relaxation of excitons is explained quantitatively in terms of the one-phonon-assisted transfer of localized excitons among islandlike structures within a quantum well. The nonexponential behavior of energy relaxation is clarified as a general feature to be observed in the low-energy tail of the density of states. The dependence of the energy relaxation rate on the quantum-well thickness is discussed along with the same dependence of the absorption bandwidth. The correlation between the energy relaxation rate and the absorption bandwidth is explained qualitatively on the basis of the scaling property of the rate equation for the exciton distribution function.

UR - http://www.scopus.com/inward/record.url?scp=0000151042&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000151042&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.31.6552

DO - 10.1103/PhysRevB.31.6552

M3 - Article

VL - 31

SP - 6552

EP - 6573

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 10

ER -