Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures

Research output: Contribution to journalArticle

Abstract

The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γh are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γh of the localized excitons at low temperatures, the energy dependence of Γh of the delocalized excitons and the dependence of Γh on the quantum well thickness are predicted.

Original languageEnglish
Pages (from-to)645-650
Number of pages6
JournalSurface Science
Volume170
Issue number1-2
DOIs
Publication statusPublished - 1986 Apr 3
Externally publishedYes

Fingerprint

Excitons
Semiconductor quantum wells
Heterojunctions
excitons
quantum wells
Linewidth
temperature dependence
Temperature
exponents
LDS 751
energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures. / Takagahara, Toshihide.

In: Surface Science, Vol. 170, No. 1-2, 03.04.1986, p. 645-650.

Research output: Contribution to journalArticle

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