Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures

Toshihide Takagahara

doi:10.1016/0039-6028(86)91034-4

Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures

Toshihide Takagahara

Research output: Contribution to journal › Article › peer-review

Abstract

The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γ_h are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γ_h of the localized excitons at low temperatures, the energy dependence of Γ_h of the delocalized excitons and the dependence of Γ_h on the quantum well thickness are predicted.

Original language	English
Pages (from-to)	645-650
Number of pages	6
Journal	Surface Science
Volume	170
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(86)91034-4
Publication status	Published - 1986 Apr 3
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(86)91034-4

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title = "Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures",

abstract = "The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γh are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γh of the localized excitons at low temperatures, the energy dependence of Γh of the delocalized excitons and the dependence of Γh on the quantum well thickness are predicted.",

author = "Toshihide Takagahara",

year = "1986",

month = apr,

day = "3",

doi = "10.1016/0039-6028(86)91034-4",

language = "English",

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pages = "645--650",

journal = "Surface Science",

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T1 - Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures

AU - Takagahara, Toshihide

PY - 1986/4/3

Y1 - 1986/4/3

N2 - The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γh are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γh of the localized excitons at low temperatures, the energy dependence of Γh of the delocalized excitons and the dependence of Γh on the quantum well thickness are predicted.

AB - The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γh are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γh of the localized excitons at low temperatures, the energy dependence of Γh of the delocalized excitons and the dependence of Γh on the quantum well thickness are predicted.

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DO - 10.1016/0039-6028(86)91034-4

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JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures

Abstract

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