Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum well heterostructures

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Abstract

The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum well heterostructures are clarified for both the localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth Γh are explained quantitatively. Furthermore, a new exponent of temperature dependence of Γh of the localized excitons at low temperatures, the energy dependence of Γh of the delocalized excitons and the dependence of Γh on the quantum well thickness are predicted.

Original languageEnglish
Pages (from-to)645-650
Number of pages6
JournalSurface Science
Volume170
Issue number1-2
DOIs
Publication statusPublished - 1986 Apr 3

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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