Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum-well heterostructures

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Abstract

The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum-well heterostructures are clarified for both localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth h are explained quantitatively. Furthermore, a new exponent for the temperature dependence of h of the localized excitons at low temperatures, the energy dependence of h of the delocalized excitons, and the dependence of h on the quantum-well thickness are predicted.

Original languageEnglish
Pages (from-to)7013-7015
Number of pages3
JournalPhysical Review B
Volume32
Issue number10
DOIs
Publication statusPublished - 1985
Externally publishedYes

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Excitons
Semiconductor quantum wells
Heterojunctions
excitons
quantum wells
Linewidth
temperature dependence
Temperature
exponents
LDS 751
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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abstract = "The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum-well heterostructures are clarified for both localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth h are explained quantitatively. Furthermore, a new exponent for the temperature dependence of h of the localized excitons at low temperatures, the energy dependence of h of the delocalized excitons, and the dependence of h on the quantum-well thickness are predicted.",
author = "Toshihide Takagahara",
year = "1985",
doi = "10.1103/PhysRevB.32.7013",
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journal = "Physical Review B-Condensed Matter",
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AB - The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum-well heterostructures are clarified for both localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth h are explained quantitatively. Furthermore, a new exponent for the temperature dependence of h of the localized excitons at low temperatures, the energy dependence of h of the delocalized excitons, and the dependence of h on the quantum-well thickness are predicted.

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