Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact

H. Jiang, T. Egawa, Hiroyasu Ishikawa, Y. B. Dou, C. L. Shao, T. Jimbo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Ir/Ni/Ir metallisation was employed as Schottky contacts of GaN Sohottky photodiodes. After annealing at 500°C in O2 for 1 min, the Schottky contact achieved the maximum barrier height of 1.28 eV and the minimum dark current densities of 1.8 × 10-10 A/cm2 at -5 V bias. The peak responsivity is 105 mA/ W at zero bias and increases to 150 mA/W at -15 V bias. The detectivity was estimated as 5.8 × 1015 cmHz1/2W-1 at zero bias.

Original languageEnglish
Pages (from-to)1604-1606
Number of pages3
JournalElectronics Letters
Volume39
Issue number22
DOIs
Publication statusPublished - 2003 Nov 22
Externally publishedYes

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Dark currents
Metallizing
Photodiodes
Current density
Annealing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact. / Jiang, H.; Egawa, T.; Ishikawa, Hiroyasu; Dou, Y. B.; Shao, C. L.; Jimbo, T.

In: Electronics Letters, Vol. 39, No. 22, 22.11.2003, p. 1604-1606.

Research output: Contribution to journalArticle

Jiang, H. ; Egawa, T. ; Ishikawa, Hiroyasu ; Dou, Y. B. ; Shao, C. L. ; Jimbo, T. / Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact. In: Electronics Letters. 2003 ; Vol. 39, No. 22. pp. 1604-1606.
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AU - Shao, C. L.

AU - Jimbo, T.

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