Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections

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Abstract

This paper reviews low dielectric constant materials for interlayer dielectric films in ultralarge-scale integrated circuit (ULSI) multilevel interconnections. The trends of ULSIs in the last decade were briefly described first. Then, the requirements for interlayer dielectric film properties and their formation techniques were explained. They are: (1) a low dielectric constant, (2) a surface planarity, (3) a gap-filling capability, and (4) a low residual stress. In contrast with the requirements, the interlayer dielectric films and related technologies developed in the last decade were reviewed. In the requirements, the low dielectric constant materials are strongly required because the device performance has been limited by signal propagation time and cross-talk in the multilevel interconnections. Furthermore, the low dielectric constant is also required for reduction of power consumption in ULSI operation. Finally, the low dielectric constant materials were summarized, and future trends of the low dielectric constant interlayer dielectric film technologies are discussed.

Original languageEnglish
Pages (from-to)243-285
Number of pages43
JournalMaterials Science and Engineering R: Reports
Volume23
Issue number6
Publication statusPublished - 1998 Sep 15

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Dielectric films
Integrated circuits
Permittivity
Residual stresses
Electric power utilization

Keywords

  • Dielectric constant
  • Interlayer dielectrics
  • Multilevel interconnection
  • Planarization
  • Ultralarge-scale integrated circuit (ULSI)

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

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abstract = "This paper reviews low dielectric constant materials for interlayer dielectric films in ultralarge-scale integrated circuit (ULSI) multilevel interconnections. The trends of ULSIs in the last decade were briefly described first. Then, the requirements for interlayer dielectric film properties and their formation techniques were explained. They are: (1) a low dielectric constant, (2) a surface planarity, (3) a gap-filling capability, and (4) a low residual stress. In contrast with the requirements, the interlayer dielectric films and related technologies developed in the last decade were reviewed. In the requirements, the low dielectric constant materials are strongly required because the device performance has been limited by signal propagation time and cross-talk in the multilevel interconnections. Furthermore, the low dielectric constant is also required for reduction of power consumption in ULSI operation. Finally, the low dielectric constant materials were summarized, and future trends of the low dielectric constant interlayer dielectric film technologies are discussed.",
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